This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540) as well as by the Latvian research council via the Latvian National Research Program under the topic ?High-Energy Physics and Accelerator Technologies?, Agreement No: VPP-IZM-CERN-2020/1-0002 for A.I. Popov. In addition, J. Purans is grateful to the ERAF project 1.1.1.1/20/A/057 while A. Platonenko was supported by Latvian Research Council No. LZP-2018/1-0214. The authors thank A. Lushchik and M. Lushchik for many useful discussions. The research was (partly) performed in the Institute of Solid State Physics, University of Latvia ISSP UL. ISSP UL as the Center of Excellence is supported through the ...
The gallium vacancy, an intrinsic acceptor, is identified in β-Ga2O3 using electron paramagnetic res...
Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for ...
The surface electronic properties of bulk-grown β-Ga2O3 (2⎯⎯01) single crystals are investigated. Th...
First-principles density functional theory (DFT) is employed to study the electronic structure of ox...
The research has been funded by the Science Committee of the Ministry of Education and Science of th...
Gallium oxide (Ga2O3) has been proposed as a promising candidate for power devices. Under the high e...
I -Ga2O3 is a very important semiconductor. However, there is still little known about the defects i...
Deep and shallow electronic states in undoped and Si-doped ε-Ga2O3 epilayers grown by MOVPE on c-ori...
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devic...
The results of a theoretical study on the point defects of monoclinic β-Ga2O3 are reported here. The...
We have applied positron annihilation spectroscopy to study a wide range of β-Ga2O3bulk crystals and...
In the last decade, researchers and commercial companies have paid great attention to ultrawide band...
This thesis brings together fundamental studies presented in five papers with the focus on the inves...
This project won an award from the College of Engineering, and the College of Arts and Sciences, as ...
This work is licensed under a Creative Commons Attribution 4.0 International License.β–Ga2O3 is a wi...
The gallium vacancy, an intrinsic acceptor, is identified in β-Ga2O3 using electron paramagnetic res...
Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for ...
The surface electronic properties of bulk-grown β-Ga2O3 (2⎯⎯01) single crystals are investigated. Th...
First-principles density functional theory (DFT) is employed to study the electronic structure of ox...
The research has been funded by the Science Committee of the Ministry of Education and Science of th...
Gallium oxide (Ga2O3) has been proposed as a promising candidate for power devices. Under the high e...
I -Ga2O3 is a very important semiconductor. However, there is still little known about the defects i...
Deep and shallow electronic states in undoped and Si-doped ε-Ga2O3 epilayers grown by MOVPE on c-ori...
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devic...
The results of a theoretical study on the point defects of monoclinic β-Ga2O3 are reported here. The...
We have applied positron annihilation spectroscopy to study a wide range of β-Ga2O3bulk crystals and...
In the last decade, researchers and commercial companies have paid great attention to ultrawide band...
This thesis brings together fundamental studies presented in five papers with the focus on the inves...
This project won an award from the College of Engineering, and the College of Arts and Sciences, as ...
This work is licensed under a Creative Commons Attribution 4.0 International License.β–Ga2O3 is a wi...
The gallium vacancy, an intrinsic acceptor, is identified in β-Ga2O3 using electron paramagnetic res...
Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for ...
The surface electronic properties of bulk-grown β-Ga2O3 (2⎯⎯01) single crystals are investigated. Th...