Temperature-stable operation of a quantum dot semiconductor disk laser

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 93, 051104 (2008) and may be found at https://doi.org/10.1063/1.2968137.We demonstrate temperature-independent output characteristics of an optically pumped semiconductor disk laser (SDL) based on quantum dots (QDs) grown in the Stranski-Krastanow regime. The gain structure consists of a stack of 7×3 QD layers, each threefold group being located at an optical antinode position. The SDL emits at 1210nm independent of the pump power density. Threshold and differential efficiency do not dependent on heat sink temperature. Continuous-wave operation close to 300mW output power is achieved using the ground-state transition of the InGaAs QDs.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP6/016769/EU/Nano-Photonics Materials and Technologies for Multicolor High-Power Sources/NATA