High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 92, 101123 (2008) and may be found at https://doi.org/10.1063/1.2898165.An optically pumped semiconductor disk laser using submonolayer quantum dots (SML QDs) as gain medium is demonstrated. High-power operation is achieved with stacked InAs∕GaAs SML QDs grown by metal-organic vapor-phase epitaxy. Each SML-QD layer is formed from tenfold alternate depositions of nominally 0.5 ML InAs and 2.3 ML GaAs. Resonant periodic gain from a 13-fold nonuniform stack design of SML QDs allows to produce 1.4W cw at 1034nm. The disk laser demonstrates the promising potential of SML-QD structures combining properties of QD and quantum-well gain media for high-power applications.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP6/016769/EU/Nano-Photonics Materials and Technologies for Multicolor High-Power Sources/NATA