Analytical approach to modulation properties of quantum dot lasers

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 109, 103112 (2011) and may be found at https://doi.org/10.1063/1.3587244.We analyze a microscopically based rate equation model for quantum dot lasers. The model separately treats the dynamics of electrons and holes, and the carrier-carrier scattering rates depend nonlinearly on the wetting layer carrier densities. Our objective is to determine analytical expressions for the relaxation oscillation frequency and damping rate. To this end, we consider the Class B limit of the five rate equations and apply asymptotic techniques. We consider two cases corresponding to either equivalent or drastically different decay rates for the electrons and holes. We show how they contribute to increase the relaxation oscillation damping rate compared to the damping rate of the conventional laser and that there exist optimal conditions on the control parameters in order to observe maximum damping.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement