The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin li...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and ...
We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxatio...
Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/A...
We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground sta...
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and qua...
Spin and orbital degrees of freedom play different roles in quantum transport through nanostructures...
The spin of a single electron in an electrically defined quantum dot in a two-dimensional electron g...
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and qu...
In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin-orbit coupl...
Abstract In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaA...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and ...
We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxatio...
Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/A...
We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground sta...
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and qua...
Spin and orbital degrees of freedom play different roles in quantum transport through nanostructures...
The spin of a single electron in an electrically defined quantum dot in a two-dimensional electron g...
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and qu...
In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin-orbit coupl...
Abstract In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaA...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...