Add to ORKGThe effects of silica abrasive size on sapphire CMP performances have been studied. We find that MRR by 10 mn silica slurry could appear rather high, approaching to two thirds of that by 100 mn silica slurry. The removal mechanisms of sapphire using different sizes silica have been investigated using atomic force microscopy (AFM) measurements through observing the variations of atomic step morphology on the wafer surface.</p
Abstract The chemical mechanical polishing (CMP) process has become a widely accepted global planari...
A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing is prese...
A study of chemical products formed on sapphire (0001) during chemical-mechanical polishing is prese...
The effects of silica abrasive size on sapphire CMP performances have been studied. We find that MRR...
Sapphire chemical mechanical polishing (CMP) performances using silica particles with different size...
The material removal mechanism of sapphire wafer during chemical mechanical polishing has been studi...
The material removal mechanism of sapphire wafer during chemical mechanical polishing has been studi...
In this paper, an innovative study is presented to characterize the chemical-mechanical planarizatio...
Whether sapphire or SiC wafer, clear and regular atomic step morphology could be observed all over t...
Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over ...
Abstract CMP(Chemical Mechanical Polishing) Processes have been used to improve the planarization of...
The influence of mechanical polishing, chemo-mechanical polishing (CMP), as well as CMP and subseque...
Surface quality of LED sapphire substrate influences epitaxy quality greatly, and further influences...
Single-crystal sapphire (α-Al2O3) is an important material and widely used in many advanced fields. ...
Chemical-mechanical polishing (CMP) has drawn significant attention as one of the most advanced tech...
Abstract The chemical mechanical polishing (CMP) process has become a widely accepted global planari...
A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing is prese...
A study of chemical products formed on sapphire (0001) during chemical-mechanical polishing is prese...
The effects of silica abrasive size on sapphire CMP performances have been studied. We find that MRR...
Sapphire chemical mechanical polishing (CMP) performances using silica particles with different size...
The material removal mechanism of sapphire wafer during chemical mechanical polishing has been studi...
The material removal mechanism of sapphire wafer during chemical mechanical polishing has been studi...
In this paper, an innovative study is presented to characterize the chemical-mechanical planarizatio...
Whether sapphire or SiC wafer, clear and regular atomic step morphology could be observed all over t...
Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over ...
Abstract CMP(Chemical Mechanical Polishing) Processes have been used to improve the planarization of...
The influence of mechanical polishing, chemo-mechanical polishing (CMP), as well as CMP and subseque...
Surface quality of LED sapphire substrate influences epitaxy quality greatly, and further influences...
Single-crystal sapphire (α-Al2O3) is an important material and widely used in many advanced fields. ...
Chemical-mechanical polishing (CMP) has drawn significant attention as one of the most advanced tech...
Abstract The chemical mechanical polishing (CMP) process has become a widely accepted global planari...
A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing is prese...
A study of chemical products formed on sapphire (0001) during chemical-mechanical polishing is prese...