Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. F...
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexib...
Spin defects existing in van der Waals materials attract wide attention thanks to their natural adva...
Optically active spin defects in wide-bandgap materials have many potential applications in quantum ...
Optically addressable spins in materials are important platforms for quantum technologies, such as r...
© 2020, The Author(s), under exclusive licence to Springer Nature Limited. Optically addressable spi...
We used optically detected magnetic resonance (ODMR) technique to directly probe electron-spin reson...
Optically active spin defects are promising candidates for solid-state quantum information and sensi...
Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile pla...
The recently discovered spin-active boron vacancy (V$_\text{B}^-$) defect center in hexagonal boron ...
Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal boron nitride (h-BN) are promising...
This is the author accepted manuscript. The final version is available from the American Chemical So...
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention ov...
Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block...
Spin defects in solid-state materials are strong candidate systems for quantum information technolog...
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention ov...
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexib...
Spin defects existing in van der Waals materials attract wide attention thanks to their natural adva...
Optically active spin defects in wide-bandgap materials have many potential applications in quantum ...
Optically addressable spins in materials are important platforms for quantum technologies, such as r...
© 2020, The Author(s), under exclusive licence to Springer Nature Limited. Optically addressable spi...
We used optically detected magnetic resonance (ODMR) technique to directly probe electron-spin reson...
Optically active spin defects are promising candidates for solid-state quantum information and sensi...
Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile pla...
The recently discovered spin-active boron vacancy (V$_\text{B}^-$) defect center in hexagonal boron ...
Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal boron nitride (h-BN) are promising...
This is the author accepted manuscript. The final version is available from the American Chemical So...
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention ov...
Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block...
Spin defects in solid-state materials are strong candidate systems for quantum information technolog...
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention ov...
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexib...
Spin defects existing in van der Waals materials attract wide attention thanks to their natural adva...
Optically active spin defects in wide-bandgap materials have many potential applications in quantum ...