Porosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process

In this work, we investigated the porosity distribution and separation property of the porous crystal layer formed via the polythermal process. The proposed porosity distribution model, considering both the cooling profile and the crystal settling effect, provided simulative results that met the MRI analysis experimental results with suitable agreement. Significant porosity variation from the top to the bottom of the crystal layer (ϕ from 0.75 to 0.55 under rapid cooling profile) was detected. Meanwhile, the vertical supersaturation degree gradient induced by the fluid fluctuation could impact nucleation and crystal growth kinetic along with crystal particle settling. The resulting crystal layer possessed various impurity inclusion conditions. Under a moderate cooling profile (0.4 K·min−1), the volume fraction of closed pores against overall pores decreased from 0.75 to 0.36. The proposed model and experimental analysis approach were demonstrated to be helpful for porosity distribution simulation and impure inclusion analysis of layer crystallization