A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting from the reaction rate theory, the dynamic nucleation was simulated to capture the evolution of the cluster population. To accommodate the non-uniform critical sizes of nuclei due to the non-isothermal conditions during PCM cell programming, an improved crystallization model was proposed that goes beyond the classical nucleation and growth model. With the above, the incubation period in which the cluster distributions reached their equilibrium was captured beyond the capability of simulations with a steady-state nucleation rate. The implications of the developed simulation method are discussed regarding PCM fast SET programming and retention....
The successful development of phase change memory technology (PCM) has been one of the most relevant...
Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-...
The quest for universal memory is driving the rapid development of memories with superior all-round ...
A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting ...
As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) h...
As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) h...
The amorphous phase of chalcogenide material in phase-change memories (PCMs) is subjected to sponta...
Data retention is an important issue in the phase-change memories (PCMs) development, which is induc...
Data retention is an important issue in the phase-change memories (PCMs) development, which is induc...
The statistical spread of intrinsic data retention times in phase-change memory (PCM) cells is stud...
Introduction: Recently, phase change memory (PCM) has entered the commercial stage in a 45 nm techno...
Data retention and its statistics are the key issues for the development of next generation phase-ch...
We developed a comprehensive simulation program of phase change memory (PCM) including the electrica...
Data retention statistics of phase-change memory with two representative cell schemes, confined and ...
The successful development of phase change memory technology (PCM) has been one of the most relevant...
Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-...
The quest for universal memory is driving the rapid development of memories with superior all-round ...
A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting ...
As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) h...
As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) h...
The amorphous phase of chalcogenide material in phase-change memories (PCMs) is subjected to sponta...
Data retention is an important issue in the phase-change memories (PCMs) development, which is induc...
Data retention is an important issue in the phase-change memories (PCMs) development, which is induc...
The statistical spread of intrinsic data retention times in phase-change memory (PCM) cells is stud...
Introduction: Recently, phase change memory (PCM) has entered the commercial stage in a 45 nm techno...
Data retention and its statistics are the key issues for the development of next generation phase-ch...
We developed a comprehensive simulation program of phase change memory (PCM) including the electrica...
Data retention statistics of phase-change memory with two representative cell schemes, confined and ...
The successful development of phase change memory technology (PCM) has been one of the most relevant...
Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-...
The quest for universal memory is driving the rapid development of memories with superior all-round ...