A high-performance and low power consumption triple-node upset self-recoverable latch (HTNURL) is proposed. It can effectively tolerate single-node upset (SNU), double-node upset (DNU), and triple-node upset (TNU). This latch uses the C-element to construct a feedback loop, which reduces the delay and power consumption by fast path and clock gating techniques. Compared with the TNU-recoverable latches, HTNURL has a lower delay, reduced power consumption, and full self-recoverability. The delay, power consumption, area overhead, and area-power-delay product (APDP) of the HTNURL is reduced by 33.87%, 63.34%, 21.13%, and 81.71% on average
A single event causing a double-node upset is likely to occur in nanometric complementary metal-oxid...
This paper presents a single-event-upset tolerant latch design based on a redundant structure featur...
First, a new high-performance robust latch (referred to as HiPeR latch) is presented that is insensi...
Due to semiconductor technology scaling, integrated circuits have become more sensitive to soft erro...
The charge sharing effect is becoming increasingly severe due to the continuous reduction of semicon...
To avoid soft errors in integrated circuits, this paper presents two high-performance latch designs,...
International audienceAs the CMOS technology is continuously scaling down, nano-scale integrated cir...
International audienceTo meet the requirements of both costeffectiveness and high reliability for lo...
International audienceFirst, this paper proposes a double-node-upset (DNU)-completely-tolerant (DNUC...
International audienceWith the advancement of semiconductor technologies, nano-scale CMOS circuits h...
International audienceThis paper presents a dual-modular-redundancy and dual-level error-interceptio...
International audienceThis paper proposes a 4-node-upset (4NU) recoverable and high-impedance-state ...
International audienceWith the reduction of technology nodes now reaching 2nm, circuits become incre...
Single event double upsets (SEDUs) caused by charge sharing have been an important contributor to th...
International audienceWith the aggressive reduction of CMOS transistor feature sizes, the soft error...
A single event causing a double-node upset is likely to occur in nanometric complementary metal-oxid...
This paper presents a single-event-upset tolerant latch design based on a redundant structure featur...
First, a new high-performance robust latch (referred to as HiPeR latch) is presented that is insensi...
Due to semiconductor technology scaling, integrated circuits have become more sensitive to soft erro...
The charge sharing effect is becoming increasingly severe due to the continuous reduction of semicon...
To avoid soft errors in integrated circuits, this paper presents two high-performance latch designs,...
International audienceAs the CMOS technology is continuously scaling down, nano-scale integrated cir...
International audienceTo meet the requirements of both costeffectiveness and high reliability for lo...
International audienceFirst, this paper proposes a double-node-upset (DNU)-completely-tolerant (DNUC...
International audienceWith the advancement of semiconductor technologies, nano-scale CMOS circuits h...
International audienceThis paper presents a dual-modular-redundancy and dual-level error-interceptio...
International audienceThis paper proposes a 4-node-upset (4NU) recoverable and high-impedance-state ...
International audienceWith the reduction of technology nodes now reaching 2nm, circuits become incre...
Single event double upsets (SEDUs) caused by charge sharing have been an important contributor to th...
International audienceWith the aggressive reduction of CMOS transistor feature sizes, the soft error...
A single event causing a double-node upset is likely to occur in nanometric complementary metal-oxid...
This paper presents a single-event-upset tolerant latch design based on a redundant structure featur...
First, a new high-performance robust latch (referred to as HiPeR latch) is presented that is insensi...