The salt-film and water acceptor mechanisms were generally accepted mechanisms for Cu electrochemical polishing (ECP) theory. These mechanisms of Cu ECP are still controversial for a long time. Conventional and new electrochemical analysis methods were used to investigate the mechanisms and behaviors of Cu electrochemical polishing. Two cases of Cu dissolution, with and without polishing, were classified by results of linear scan voltammetry (LSV) and scanning electron microscopy (SEM). The electrochemical impedance spectroscopy (EIS) results showed the main difference in these two cases was in the low-frequency region. However, it was hard to distinguish between the salt-film and water acceptor mechanisms by conventional electrochemical an...
In this research, we investigated the electrochemical behavior of copper (Cu) surfaces during chemic...
In this research, we investigated the electrochemical behavior of copper (Cu) surfaces during chemic...
Chemical mechanical polishing (CMP) of copper was performed using KIO 3 as oxidizer and alumina part...
tudied er spe ate du s are ffectiv rodyn 783 # A ived J a prototype for fundamental studies of elect...
During copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially re...
Copper chemical mechanical polishing (CMP) is a key step in microelectronic interconnect fabrication...
Chemical mechanical polishing of copper was performed using H 2O2 as oxidizer and alumina particles ...
In this research, the effect of surface-active substances (CMC and DFP) on the electrolysis of coppe...
Chemical mechanical polishing (CMP) of copper in ammonium hydroxide based slurry in the presence of ...
Chemical mechanical polishing of copper was performed using H 2O2 as oxidizer and alumina particles ...
Chemical mechanical polishing (CMP) of dielectric and metal films has become a key process in manufa...
2 Anodic dissolution of copper in arginine and hydrogen peroxide based medium suitable for chemical ...
Chemical mechanical polishing (CMP) of copper was performed using H2O2, as oxidizer and alumina part...
Chemical mechanical polishing (CMP) of copper was performed using H2O2 as oxidizer and alumina parti...
Chemical mechanical polishing (CMP) of copper was performed using KIO 3 as oxidizer and alumina part...
In this research, we investigated the electrochemical behavior of copper (Cu) surfaces during chemic...
In this research, we investigated the electrochemical behavior of copper (Cu) surfaces during chemic...
Chemical mechanical polishing (CMP) of copper was performed using KIO 3 as oxidizer and alumina part...
tudied er spe ate du s are ffectiv rodyn 783 # A ived J a prototype for fundamental studies of elect...
During copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially re...
Copper chemical mechanical polishing (CMP) is a key step in microelectronic interconnect fabrication...
Chemical mechanical polishing of copper was performed using H 2O2 as oxidizer and alumina particles ...
In this research, the effect of surface-active substances (CMC and DFP) on the electrolysis of coppe...
Chemical mechanical polishing (CMP) of copper in ammonium hydroxide based slurry in the presence of ...
Chemical mechanical polishing of copper was performed using H 2O2 as oxidizer and alumina particles ...
Chemical mechanical polishing (CMP) of dielectric and metal films has become a key process in manufa...
2 Anodic dissolution of copper in arginine and hydrogen peroxide based medium suitable for chemical ...
Chemical mechanical polishing (CMP) of copper was performed using H2O2, as oxidizer and alumina part...
Chemical mechanical polishing (CMP) of copper was performed using H2O2 as oxidizer and alumina parti...
Chemical mechanical polishing (CMP) of copper was performed using KIO 3 as oxidizer and alumina part...
In this research, we investigated the electrochemical behavior of copper (Cu) surfaces during chemic...
In this research, we investigated the electrochemical behavior of copper (Cu) surfaces during chemic...
Chemical mechanical polishing (CMP) of copper was performed using KIO 3 as oxidizer and alumina part...