Abstract Photon recycling (PR) plays an important role in the study of semiconductor materials and impacts the properties of their optoelectronic applications. However, PR has not been investigated comprehensively and it has not been demonstrated experimentally in many different kinds of semiconductor materials and devices. In this review paper, first, the authors introduce the background of PR and describe how this phenomenon was originally identified in semiconductors. Then, the theory and modelling of PR is reviewed and some of the important parameters that are used to quantify PR are highlighted. Next, a variety of the methods used to achieve and characterize PR in materials and devices are discussed. Examples of how the performance par...
Perovskite light-emitting diodes have recently broken the 20% barrier for external quantum efficienc...
In this study, we assess the charge carrier diffusive transport quality of traditional and emerging ...
ingle junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can...
Reabsorption and reemission of photons, or photon recycling (PR) effect, represents an outstanding m...
Gallium arsenide light emitting diodes (LEDs) were fabricated using molecular beam epitaxial films o...
In this chapter we consider the important optical and electronic processes which influence the prope...
Numerical modeling is an invaluable tool in aiding in the analysis and design of semiconductor devic...
Photon recycling has been proven to be an important process in metal halide perovskite thin films. W...
Reabsorption and reemission of photons, or photon recycling (PR) effect, represents an outstanding m...
A simple model of a homojunction solar cell is improved by taking into account the effect of photon ...
Radiatively dominated III-V semiconductor solar cells are strongly influenced by the effects of phot...
Photon recycling mechanisms in single junction thin-film GaAs solar cells are evaluated in this stud...
Abstract: Perovskite light-emitting diodes have recently broken the 20% barrier for external quantum...
Photoconductivity is the incremental change in the electrical conductivity of a semiconductor or ins...
Optoelectronic materials are the backbone of today's high‐tech industry. To customize their re...
Perovskite light-emitting diodes have recently broken the 20% barrier for external quantum efficienc...
In this study, we assess the charge carrier diffusive transport quality of traditional and emerging ...
ingle junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can...
Reabsorption and reemission of photons, or photon recycling (PR) effect, represents an outstanding m...
Gallium arsenide light emitting diodes (LEDs) were fabricated using molecular beam epitaxial films o...
In this chapter we consider the important optical and electronic processes which influence the prope...
Numerical modeling is an invaluable tool in aiding in the analysis and design of semiconductor devic...
Photon recycling has been proven to be an important process in metal halide perovskite thin films. W...
Reabsorption and reemission of photons, or photon recycling (PR) effect, represents an outstanding m...
A simple model of a homojunction solar cell is improved by taking into account the effect of photon ...
Radiatively dominated III-V semiconductor solar cells are strongly influenced by the effects of phot...
Photon recycling mechanisms in single junction thin-film GaAs solar cells are evaluated in this stud...
Abstract: Perovskite light-emitting diodes have recently broken the 20% barrier for external quantum...
Photoconductivity is the incremental change in the electrical conductivity of a semiconductor or ins...
Optoelectronic materials are the backbone of today's high‐tech industry. To customize their re...
Perovskite light-emitting diodes have recently broken the 20% barrier for external quantum efficienc...
In this study, we assess the charge carrier diffusive transport quality of traditional and emerging ...
ingle junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can...