The multicomponent film of (GaAs1-Bi)1-x-y(Ge2)x(ZnSe)y, which is a singlecrystal with the (111) orientation and has a sphalerite structure with the lattice parameter af = 5.656‖Å‖is‖synthesized‖by‖the‖method‖of‖liquid-phase epitaxy. It is defined that the distribution of components over the surface is homogeneous, and the Ge2 and ZnSe contents varies with the film thickness in the range 0 х 0.31, 0 у 0.23
ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallizat...
The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crysta...
The determination of crystallization paths in the phase diagram of Ga-In-P allows us to predict the ...
The multicomponent film of (GaAs1-Bi)1-x-y(Ge2)x(ZnSe)y, which is a singlecrystal with the (111) ori...
This paper shows the possibility of growing a single-crystal solid solution of substitution (GaAs1-δ...
In this work, we explored the possibility of growing a substitutional solid solution (GaAs)1−x(ZnSe)...
The crystalline properties of ZnSe/(100)GaAs and ZnSSe/(100)GaAs structures are presented. ZnSe and ...
In order to find the structural characteristics of the thin films of group - semiconductor compound...
The work is concerned with films GaAs, Ga"2Se"3, GaSe and others. In the result of the res...
ZnSnP ~ is a potentially useful semiconductor which can have either the sphalerite structure or the ...
Fe<sub>3</sub>Si/Ge(Fe,Si)/Fe<sub>3</sub>Si thin-film stacks were grown by a combination of molecula...
We have systematically investigated the compositional plane of solubility range and lattice constant...
Structural and calorimetric investigation of Ge$_{x}$Te$_{100−x}$ films over wide range of concentra...
International audienceThe structure of ZnSe epilayers grown by molecular-beam epitaxy on SrTiO3 001 ...
AbstractTiZr-based multicomponent metallic films composed of 3–5 constituents with almost equal atom...
ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallizat...
The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crysta...
The determination of crystallization paths in the phase diagram of Ga-In-P allows us to predict the ...
The multicomponent film of (GaAs1-Bi)1-x-y(Ge2)x(ZnSe)y, which is a singlecrystal with the (111) ori...
This paper shows the possibility of growing a single-crystal solid solution of substitution (GaAs1-δ...
In this work, we explored the possibility of growing a substitutional solid solution (GaAs)1−x(ZnSe)...
The crystalline properties of ZnSe/(100)GaAs and ZnSSe/(100)GaAs structures are presented. ZnSe and ...
In order to find the structural characteristics of the thin films of group - semiconductor compound...
The work is concerned with films GaAs, Ga"2Se"3, GaSe and others. In the result of the res...
ZnSnP ~ is a potentially useful semiconductor which can have either the sphalerite structure or the ...
Fe<sub>3</sub>Si/Ge(Fe,Si)/Fe<sub>3</sub>Si thin-film stacks were grown by a combination of molecula...
We have systematically investigated the compositional plane of solubility range and lattice constant...
Structural and calorimetric investigation of Ge$_{x}$Te$_{100−x}$ films over wide range of concentra...
International audienceThe structure of ZnSe epilayers grown by molecular-beam epitaxy on SrTiO3 001 ...
AbstractTiZr-based multicomponent metallic films composed of 3–5 constituents with almost equal atom...
ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallizat...
The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crysta...
The determination of crystallization paths in the phase diagram of Ga-In-P allows us to predict the ...
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