Add to ORKGThin films of Cu(In,Ga)Se2 on Mo coated glass substrates were studied by photolumines-cence (PL) technique before and after irradiation with a dose of 1.8·1015 cm–2 of 10 MeV electrons to determine the nature of radiation defects in Cu(In,Ga)Se2.Работа выполнена при финансовой поддержке РНФ (проект № 17-12-01500)
In this work we investigate the electronic surface properties of polycrystalline Cu In,Ga Se2 thin f...
Cathodoluminescence CL has been measured at 10 K in cross section and plan view configuration on C...
A detailed composition, intensity and temperature dependent photoluminescence PL study of CuInSe2 ...
The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se2 thin films was invest...
Thin films of Cu(In, Ga)Se-2 (CIGS) with a Ga/(Ga + In) ratio of similar to 0.27 corresponding to th...
The electronic defects in any semiconductor play a decisive role for the usability of this material ...
High-quality single crystals of CuInSe2 with near-stoichiometric elemental compositions were irradia...
In this study we were trying to answer the question why the best laboratory size CuIn1-xGaxSe2-based...
The present review gives an overview of the various reports on properties of line and planar defects...
The present review gives an overview of the various reports on properties of line and planar defects...
Cu(In,Ga)Se2 (CIGS) and its alloys are the leading choice for thin film photovoltaic absorber layer...
At the Laboratory, photon emission in semiconductors has been mapped in the nanoscale using scanning...
The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovolt...
The copper chalcogenide (CuX, X = S, Se) thin films have been irradiated with 100 MeV gold swift hea...
The photoresponse of Cd-doped CuInSe2 (CIS) epitaxial thin films on GaAs(100) was studied using x-ra...
In this work we investigate the electronic surface properties of polycrystalline Cu In,Ga Se2 thin f...
Cathodoluminescence CL has been measured at 10 K in cross section and plan view configuration on C...
A detailed composition, intensity and temperature dependent photoluminescence PL study of CuInSe2 ...
The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se2 thin films was invest...
Thin films of Cu(In, Ga)Se-2 (CIGS) with a Ga/(Ga + In) ratio of similar to 0.27 corresponding to th...
The electronic defects in any semiconductor play a decisive role for the usability of this material ...
High-quality single crystals of CuInSe2 with near-stoichiometric elemental compositions were irradia...
In this study we were trying to answer the question why the best laboratory size CuIn1-xGaxSe2-based...
The present review gives an overview of the various reports on properties of line and planar defects...
The present review gives an overview of the various reports on properties of line and planar defects...
Cu(In,Ga)Se2 (CIGS) and its alloys are the leading choice for thin film photovoltaic absorber layer...
At the Laboratory, photon emission in semiconductors has been mapped in the nanoscale using scanning...
The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovolt...
The copper chalcogenide (CuX, X = S, Se) thin films have been irradiated with 100 MeV gold swift hea...
The photoresponse of Cd-doped CuInSe2 (CIS) epitaxial thin films on GaAs(100) was studied using x-ra...
In this work we investigate the electronic surface properties of polycrystalline Cu In,Ga Se2 thin f...
Cathodoluminescence CL has been measured at 10 K in cross section and plan view configuration on C...
A detailed composition, intensity and temperature dependent photoluminescence PL study of CuInSe2 ...