Add to ORKGA new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and Al_xGa_(1-x)As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime
A novel ultrafast reflective grating-imaging technique has been developed to measure ambipolar carri...
Owing to the anisotropy of the optical and electronic properties of layered materials, the photocurr...
Abstract : We propose a method to investigate the carrier transport properties in the ultrathin wett...
A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodolu...
A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is pre...
Ambipolar vertical diffusion of carriers generated in an Al0.3Ga0.7As barrier is investigated by cat...
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...
The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole...
We have measured the ambipolar diffusion lengths in nanowires with GaAs and AlGaAs core material usi...
We present a comparative study of carrier diffusion in semiconductor heterostructures with different...
International audienceWe present a comparative study of carrier diffusion in semiconductor heterostr...
Producción CientíficaThe diffusion length of minority carriers in a p-doped InGaP layer is derived f...
Permissions were not obtained for sharing the full text of this article. Full text is available at ...
[[abstract]]The carrier transport in strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QW...
Axial GaAs nanowire p–n diodes, possibly one of the core elements of future nanowire solar cells and...
A novel ultrafast reflective grating-imaging technique has been developed to measure ambipolar carri...
Owing to the anisotropy of the optical and electronic properties of layered materials, the photocurr...
Abstract : We propose a method to investigate the carrier transport properties in the ultrathin wett...
A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodolu...
A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is pre...
Ambipolar vertical diffusion of carriers generated in an Al0.3Ga0.7As barrier is investigated by cat...
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...
The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole...
We have measured the ambipolar diffusion lengths in nanowires with GaAs and AlGaAs core material usi...
We present a comparative study of carrier diffusion in semiconductor heterostructures with different...
International audienceWe present a comparative study of carrier diffusion in semiconductor heterostr...
Producción CientíficaThe diffusion length of minority carriers in a p-doped InGaP layer is derived f...
Permissions were not obtained for sharing the full text of this article. Full text is available at ...
[[abstract]]The carrier transport in strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QW...
Axial GaAs nanowire p–n diodes, possibly one of the core elements of future nanowire solar cells and...
A novel ultrafast reflective grating-imaging technique has been developed to measure ambipolar carri...
Owing to the anisotropy of the optical and electronic properties of layered materials, the photocurr...
Abstract : We propose a method to investigate the carrier transport properties in the ultrathin wett...