Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h
photoluminescence, nanoclusters, erbium, Transmission electron microscopyWe have studied the 1.5 µm ...
[[abstract]]The mechanisms for silicon (Si) defect and nanocrystal related white and near-infrared e...
In this project, Si nanocrystals embedded in dielectric matrix have been synthesized with the techni...
Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion i...
Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated sol...
Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperatu...
Cataloged from PDF version of article.In the light of growing importance of semiconductor nanocrysta...
There has been much interest in semiconductor nanocrystals embedded in oxides and their interesting ...
AbstractCathodoluminescence (CL), high resolution transmission (HR-TEM) and scanning transmission el...
The aim of this work was to find a correlation between the electrical, optical and microstructural p...
Two sources of room temperature visible luminescence are identified from SiO2 films containing ion b...
We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilica...
Dept. ElectrònicaAn in-depth study of the physical and electrical properties of Si-nanocrystal-based...
Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-elec...
The authors report the photon-induced conduction modulation in Si O2 thin films embedded with german...
photoluminescence, nanoclusters, erbium, Transmission electron microscopyWe have studied the 1.5 µm ...
[[abstract]]The mechanisms for silicon (Si) defect and nanocrystal related white and near-infrared e...
In this project, Si nanocrystals embedded in dielectric matrix have been synthesized with the techni...
Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion i...
Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated sol...
Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperatu...
Cataloged from PDF version of article.In the light of growing importance of semiconductor nanocrysta...
There has been much interest in semiconductor nanocrystals embedded in oxides and their interesting ...
AbstractCathodoluminescence (CL), high resolution transmission (HR-TEM) and scanning transmission el...
The aim of this work was to find a correlation between the electrical, optical and microstructural p...
Two sources of room temperature visible luminescence are identified from SiO2 films containing ion b...
We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilica...
Dept. ElectrònicaAn in-depth study of the physical and electrical properties of Si-nanocrystal-based...
Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-elec...
The authors report the photon-induced conduction modulation in Si O2 thin films embedded with german...
photoluminescence, nanoclusters, erbium, Transmission electron microscopyWe have studied the 1.5 µm ...
[[abstract]]The mechanisms for silicon (Si) defect and nanocrystal related white and near-infrared e...
In this project, Si nanocrystals embedded in dielectric matrix have been synthesized with the techni...