Phonon modes and Raman intensities of Ge quantum dots (QDs) with two different types of surfaces, a free standing surface or a fixed surface, in a size range from five atoms to 7 nm in diameter, are calculated by using a microscopic valence force field model. The results are compared, and the effects of surfaces on phonon properties of QDs are investigated. It is found that phonon modes and Raman intensities of QDs with these two different types of surfaces have obvious differences which clearly reveal the effects of the surfaces of QDs. The calculated results agree with existing experimental observations. We expect that our calculations will stimulate more experimental measurements on phonon properties and Raman intensities of QDs
Abstract. In this paper, the problem of electron-phonon interaction (EPI) in semiconductor crystals ...
Strong coupling of a confined exciton to optical phonons in semiconductor quantum dots (QDs) leading...
A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semicond...
Raman intensities of Si quantum dots (QD\u27s) with up to 11489 atoms (about 7.6 nm in diameter) for...
Phonon modes in spherical InAs quantum dots (QDs) with up to 11 855 atoms (about 8.5 nm in diameter)...
We have studied the Raman intensities of low-frequency phonon modes in germanium (Ge) nanocrystals (...
We have used a microscopic lattice dynamical model to study phonon modes in germanium (Ge) NC with s...
Three empirical interatomic force fields are parametrized using structural, elastic, and phonon disp...
Phonon modes in spherical GaAs quantum dots (QDs) with up to 11,855 atoms (8 nm in size) are calcula...
We studied the confinement effects on the phonon Spectra of CdTe quantum dots by means of resonant R...
Multiphonon processes in a model quantum dot (QD) containing two electronic states and several optic...
Raman scattering measurements were carried out in a self-organized multilayered Ge quantum dot sampl...
The probe of surface properties of quantum dots (QDs) is of great importance as the surface properti...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemistry, 2016.This electronic...
Coherent acoustic phonon oscillation is observed in PbSe quantum dots embedded in phosphate glass by...
Abstract. In this paper, the problem of electron-phonon interaction (EPI) in semiconductor crystals ...
Strong coupling of a confined exciton to optical phonons in semiconductor quantum dots (QDs) leading...
A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semicond...
Raman intensities of Si quantum dots (QD\u27s) with up to 11489 atoms (about 7.6 nm in diameter) for...
Phonon modes in spherical InAs quantum dots (QDs) with up to 11 855 atoms (about 8.5 nm in diameter)...
We have studied the Raman intensities of low-frequency phonon modes in germanium (Ge) nanocrystals (...
We have used a microscopic lattice dynamical model to study phonon modes in germanium (Ge) NC with s...
Three empirical interatomic force fields are parametrized using structural, elastic, and phonon disp...
Phonon modes in spherical GaAs quantum dots (QDs) with up to 11,855 atoms (8 nm in size) are calcula...
We studied the confinement effects on the phonon Spectra of CdTe quantum dots by means of resonant R...
Multiphonon processes in a model quantum dot (QD) containing two electronic states and several optic...
Raman scattering measurements were carried out in a self-organized multilayered Ge quantum dot sampl...
The probe of surface properties of quantum dots (QDs) is of great importance as the surface properti...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemistry, 2016.This electronic...
Coherent acoustic phonon oscillation is observed in PbSe quantum dots embedded in phosphate glass by...
Abstract. In this paper, the problem of electron-phonon interaction (EPI) in semiconductor crystals ...
Strong coupling of a confined exciton to optical phonons in semiconductor quantum dots (QDs) leading...
A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semicond...