10.1002/(SICI)1096-9918(199911)27:113.0.CO;2-JSurface and Interface Analysis2711993-997SIAN
This work describes an XPS investigation of plasma-deposited polysiloxane films irradiated with 170 ...
Various observations concerning the interaction mechanism of ion beam surface interaction at grazing...
The direct deposition in thin films and the production of very shallow junctions by ultralow energy ...
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP
Surfaces of GaAs and InP(110) single crystals have been modified by ion bombardment at different ene...
In this paper presents the results of computer simulation of ion scattering from the InP(001) surfac...
The altered layer produced by sputtering SiO2 with Ar+ , Ne+ and He+ ions of 70-500 eV energy is stu...
The change in the short-range order created by ion milling in the near surface region of InP single ...
310-319<span style="font-size: 15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman"...
This paper describes use of the in situ ion beam analysis facility developed at Los Alamos National ...
Surface compositional change of GaP, GaAs, GaSb, InP, InAs, InSb, GeSi and CdSe single crystals due ...
A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process result...
International audienceIndium phosphide (InP) surfaces are greatly affected by ionic bombardment. We ...
InP (001) samples were irradiated with 200 MeV Au ions at different fluences. The surface nanotopogr...
CNRS AR 12301 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueSIGLEFRFranc
This work describes an XPS investigation of plasma-deposited polysiloxane films irradiated with 170 ...
Various observations concerning the interaction mechanism of ion beam surface interaction at grazing...
The direct deposition in thin films and the production of very shallow junctions by ultralow energy ...
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP
Surfaces of GaAs and InP(110) single crystals have been modified by ion bombardment at different ene...
In this paper presents the results of computer simulation of ion scattering from the InP(001) surfac...
The altered layer produced by sputtering SiO2 with Ar+ , Ne+ and He+ ions of 70-500 eV energy is stu...
The change in the short-range order created by ion milling in the near surface region of InP single ...
310-319<span style="font-size: 15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman"...
This paper describes use of the in situ ion beam analysis facility developed at Los Alamos National ...
Surface compositional change of GaP, GaAs, GaSb, InP, InAs, InSb, GeSi and CdSe single crystals due ...
A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process result...
International audienceIndium phosphide (InP) surfaces are greatly affected by ionic bombardment. We ...
InP (001) samples were irradiated with 200 MeV Au ions at different fluences. The surface nanotopogr...
CNRS AR 12301 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueSIGLEFRFranc
This work describes an XPS investigation of plasma-deposited polysiloxane films irradiated with 170 ...
Various observations concerning the interaction mechanism of ion beam surface interaction at grazing...
The direct deposition in thin films and the production of very shallow junctions by ultralow energy ...