XPS studies on nitridation of InP(100) surface by N+ 2 ion beam bombardment
- Pan, J.S.
- Wee, A.T.S.
- Huan, C.H.A.
- Tan, H.S.
- Tan, K.L.
DOIAbstract
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP
[[abstract]]The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchro...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2...
Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spec...
The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. T...
The effect of a potassium overlayer on nitridation and oxidation of the InP(100) surface is investig...
The effect of molecular nitrogen exposure on the surfaces of InP(100) modified by potassium overlaye...
This work deals with the nitridation of the indium phosphide. Indium phosphide is a III-V semiconduc...
International audienceThis article investigates the nitridation effect of InP(100) semiconductor sur...
The nitridation of AIII-BV semiconductors surfaces has attracted much attention because of the impor...
10.1002/(SICI)1096-9918(199911)27:113.0.CO;2-JSurface and Interface Analysis2711993-997SIAN
International audienceAuger electron spectroscopy (AES) was used to investigate the processes taking...
The reactions of chlorine on the InP(100)(4 × 2) surface have been investigated using LEED, AES and ...
Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP impla...
The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconducto...
[[abstract]]The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchro...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2...
Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spec...
The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. T...
The effect of a potassium overlayer on nitridation and oxidation of the InP(100) surface is investig...
The effect of molecular nitrogen exposure on the surfaces of InP(100) modified by potassium overlaye...
This work deals with the nitridation of the indium phosphide. Indium phosphide is a III-V semiconduc...
International audienceThis article investigates the nitridation effect of InP(100) semiconductor sur...
The nitridation of AIII-BV semiconductors surfaces has attracted much attention because of the impor...
10.1002/(SICI)1096-9918(199911)27:113.0.CO;2-JSurface and Interface Analysis2711993-997SIAN
International audienceAuger electron spectroscopy (AES) was used to investigate the processes taking...
The reactions of chlorine on the InP(100)(4 × 2) surface have been investigated using LEED, AES and ...
Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP impla...
The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconducto...
[[abstract]]The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchro...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2...
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