10.1016/S0168-583X(01)00633-4Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms1794557-560NIMB
The use of a normal incidence sub-kev O-2(+) beam in secondary ion mass spectrometry (SIMS) depth pr...
There are four generally mutually exclusive requirements that plague many mass spectrometric measure...
The analysis of polymers by secondary ion mass spectrometry (SIMS) has been a topic of interest for ...
The use of sub-keV primary ion beams for SIMS depth profiling is growing rapidly, especially in the ...
The depth resolution attainable in secondary ion mass spectroscopy (SIMS) depth profiling is shown t...
Limitations in dynamic range previously experienced in SIMS depth profiling are shown to be caused b...
Using a boron multi-delta layer structure, we explore the use of ultra-low energy primary ion beams ...
Depth profiling by sputtering in combination with the detection of mass selected secondary ions is a...
The use of ultra-low-energy probes for the characterization of shallow implants using secondary ion ...
The ability of five Secondary Ion Mass Spectrometry (SIMS) instruments to resolve thin layer and mod...
The features of ultra-shallow junctions indicated by 2001 International Roadmaps require challenging...
As device dimensions decrease and packing densities increase, the need for accurate mapping of dopan...
The medium energy ion scattering (MEIS) system at the University of Western Ontario has been modifie...
Ultra shallow dopant profiles are one of the major challenges for ULSI silicon metrology. Following ...
For quantitative depth profile analysis of hard and wear resistant coatings (general composition, me...
The use of a normal incidence sub-kev O-2(+) beam in secondary ion mass spectrometry (SIMS) depth pr...
There are four generally mutually exclusive requirements that plague many mass spectrometric measure...
The analysis of polymers by secondary ion mass spectrometry (SIMS) has been a topic of interest for ...
The use of sub-keV primary ion beams for SIMS depth profiling is growing rapidly, especially in the ...
The depth resolution attainable in secondary ion mass spectroscopy (SIMS) depth profiling is shown t...
Limitations in dynamic range previously experienced in SIMS depth profiling are shown to be caused b...
Using a boron multi-delta layer structure, we explore the use of ultra-low energy primary ion beams ...
Depth profiling by sputtering in combination with the detection of mass selected secondary ions is a...
The use of ultra-low-energy probes for the characterization of shallow implants using secondary ion ...
The ability of five Secondary Ion Mass Spectrometry (SIMS) instruments to resolve thin layer and mod...
The features of ultra-shallow junctions indicated by 2001 International Roadmaps require challenging...
As device dimensions decrease and packing densities increase, the need for accurate mapping of dopan...
The medium energy ion scattering (MEIS) system at the University of Western Ontario has been modifie...
Ultra shallow dopant profiles are one of the major challenges for ULSI silicon metrology. Following ...
For quantitative depth profile analysis of hard and wear resistant coatings (general composition, me...
The use of a normal incidence sub-kev O-2(+) beam in secondary ion mass spectrometry (SIMS) depth pr...
There are four generally mutually exclusive requirements that plague many mass spectrometric measure...
The analysis of polymers by secondary ion mass spectrometry (SIMS) has been a topic of interest for ...
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