10.1143/JJAP.44.7922Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers44117922-7924JAPN
We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germani...
This thesis consists of two parts. The first part presents an investigation of mechanical stress in ...
Raman microspectroscopy has been used to determine the volumetric micro-strain distribution in mecha...
In this work, the Raman shift of the single-phonon peaks in silicon is predicted from first principl...
The strain-shift coefficient used to convert Raman shifts to strain depends on multiple factors incl...
In this work the calibration of the directional Raman strain shift coefficient for tensile strained ...
In this work the calibration of the directional Raman strain shift coefficient for tensile strained ...
The concept of the phonon-mode Grüneisen tensor is reviewed as method to determine the elastic strai...
The temperature evolution of strain in GaAs layers grown on Si (0 0 1) and Si (1 1 1) substrates has...
Strain in a material induces shifts in vibrational frequencies, which is a probe of the nature of th...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
International audienceWe report preliminary results on the Raman characterization of strained-Si fil...
Strained silicon underneath the field-effect transistor gate increases significantly the charge carr...
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germ...
In this work, 100 nm-thick boron-doped silicon beams with doping levels between 1 × 1016 and 1 × 102...
We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germani...
This thesis consists of two parts. The first part presents an investigation of mechanical stress in ...
Raman microspectroscopy has been used to determine the volumetric micro-strain distribution in mecha...
In this work, the Raman shift of the single-phonon peaks in silicon is predicted from first principl...
The strain-shift coefficient used to convert Raman shifts to strain depends on multiple factors incl...
In this work the calibration of the directional Raman strain shift coefficient for tensile strained ...
In this work the calibration of the directional Raman strain shift coefficient for tensile strained ...
The concept of the phonon-mode Grüneisen tensor is reviewed as method to determine the elastic strai...
The temperature evolution of strain in GaAs layers grown on Si (0 0 1) and Si (1 1 1) substrates has...
Strain in a material induces shifts in vibrational frequencies, which is a probe of the nature of th...
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any criti...
International audienceWe report preliminary results on the Raman characterization of strained-Si fil...
Strained silicon underneath the field-effect transistor gate increases significantly the charge carr...
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germ...
In this work, 100 nm-thick boron-doped silicon beams with doping levels between 1 × 1016 and 1 × 102...
We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germani...
This thesis consists of two parts. The first part presents an investigation of mechanical stress in ...
Raman microspectroscopy has been used to determine the volumetric micro-strain distribution in mecha...
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