There are trade-offs for each power converter design which are mainly dictated by the switching component and passive component ratings. Recent power electronic devices such as Gallium Nitride (GaN) transistors can improve the application range of power converter topologies with lower conduction and switching losses. These new capabilities brought by the GaN High Electron Mobility Transistors (HEMTs) inevitably changes the feasible operation ranges of power converters. This paper investigates the feasibility of Buck and Boost based bi-directional DC/DC converter which utilizes Quasi-Square-Wave (QSW) Zero Voltage Switching (ZVS) on GaN HEMTs. The proposed converter applies a high-switching frequency at high output power to maximize the powe...
Wide Band Gap (WBG) semiconductor technologies such as Silicon Carbide (SiC) and Gallium Nitride (Ga...
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit ...
Abstract Several DC loads in data center and telecom industry are fed by power electronic rectifier...
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range....
High-voltage GaN switches offer low conduction and commutation losses compared with their Si counter...
Wide band-gap semiconductors are superior to Si-based semiconductors with their increased electron m...
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range....
This paper presents a compact 3 kW bidirectional GaN-HEMT DC/DC converter for 360V to 400-500 V. A v...
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point...
Gallium nitride (GaN), a wide bandgap material, has grand success for high-brightness light-emitting...
Defense is held on 21.9.2021 12:15 – 15:15 via remote technology, https://aalto.zoom.us/j/6262211...
In this study, a Dual Active Bridge DC/DC converter using GaN HEMT type transistors on both bridges...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
abstract: This work analyzes and develops a point-of-load (PoL) synchronous buck converter using enh...
Gallium nitride (GaN) power devices exhibit a much lower gate capacitance for a similar on-resistanc...
Wide Band Gap (WBG) semiconductor technologies such as Silicon Carbide (SiC) and Gallium Nitride (Ga...
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit ...
Abstract Several DC loads in data center and telecom industry are fed by power electronic rectifier...
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range....
High-voltage GaN switches offer low conduction and commutation losses compared with their Si counter...
Wide band-gap semiconductors are superior to Si-based semiconductors with their increased electron m...
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range....
This paper presents a compact 3 kW bidirectional GaN-HEMT DC/DC converter for 360V to 400-500 V. A v...
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point...
Gallium nitride (GaN), a wide bandgap material, has grand success for high-brightness light-emitting...
Defense is held on 21.9.2021 12:15 – 15:15 via remote technology, https://aalto.zoom.us/j/6262211...
In this study, a Dual Active Bridge DC/DC converter using GaN HEMT type transistors on both bridges...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
abstract: This work analyzes and develops a point-of-load (PoL) synchronous buck converter using enh...
Gallium nitride (GaN) power devices exhibit a much lower gate capacitance for a similar on-resistanc...
Wide Band Gap (WBG) semiconductor technologies such as Silicon Carbide (SiC) and Gallium Nitride (Ga...
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit ...
Abstract Several DC loads in data center and telecom industry are fed by power electronic rectifier...