Add to ORKGThe high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs 1-x Sb x absorber
The electrical power supplied to satellites will continue to be provided by solar cells for the fore...
The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium...
Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have dem...
Solar cells made of Ge, Ge(0.93)Si(0.07) alloys, GaAs and Al(0.08)Ga(0.92)As were irradiated in two ...
The radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel ju...
Photodiodes made of III-V materials are ubiquitous with applications for telecommunications, photoni...
In this work, novel III-V photovoltaic (PV) materials and device structures are investi- gated for s...
In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their ...
This paper describes ultra-lightweight, high performance, thin, light trapping GaAs solar cells for ...
The radiation hardness of AlGaAs single-junction solar cells is investigated for various n-i-p solar...
Contains fulltext : 33157.pdf (publisher's version ) (Closed access)In the present...
Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradat...
The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured usi...
One of the major limitations of solar cells in space power systems is their vulnerability to radiati...
Electronic and optoelectronic devices designed for high level of charged particle radiation environm...
The electrical power supplied to satellites will continue to be provided by solar cells for the fore...
The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium...
Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have dem...
Solar cells made of Ge, Ge(0.93)Si(0.07) alloys, GaAs and Al(0.08)Ga(0.92)As were irradiated in two ...
The radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel ju...
Photodiodes made of III-V materials are ubiquitous with applications for telecommunications, photoni...
In this work, novel III-V photovoltaic (PV) materials and device structures are investi- gated for s...
In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their ...
This paper describes ultra-lightweight, high performance, thin, light trapping GaAs solar cells for ...
The radiation hardness of AlGaAs single-junction solar cells is investigated for various n-i-p solar...
Contains fulltext : 33157.pdf (publisher's version ) (Closed access)In the present...
Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradat...
The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured usi...
One of the major limitations of solar cells in space power systems is their vulnerability to radiati...
Electronic and optoelectronic devices designed for high level of charged particle radiation environm...
The electrical power supplied to satellites will continue to be provided by solar cells for the fore...
The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium...
Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have dem...