Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls

International audienceThis article presents a complete plasma etching process to etch high aspect ratio patterns on III-V/Ge solar cell heterostructure with low damage for the fabrication of multijunction solar cells with a through cell via contact architecture. A SiCl 4 /H 2 chemistry was studied with different hydrogen dilutions within the plasma (0%, up to 67%) and with different cathode temperatures (20 • C, up to 200 • C). This chemistry choice creates a SiCl x-base