Investigations on the displacement damage dose effects induced by heavy ion irradiation in silicon PiN photodiodes: Implications for modeling and simulation

International audienceIn this paper, the displacement damage dose effects in PiN photodiodes is investigated using heavy ions experiments andnumerical simulations realized thanks to Technology Computer Aided Design (TCAD) calculations. The parameter of interestis the dark current IDARK delivered by the photodiode which evolves during the heavy ions irradiation. The main goal is todefine a model which bridges the gap between the introduction of traps energy states localized in the Si bandgap and theelectrical behavior (as dark current variation)