Electronic structure of cubic gallium nitride films grown on GaAs

The composition, surface structure, and electronic structure of zinc blende–GaN films grown on GaAs (100) and (110) by plasma‐assisted molecular beam epitaxy were investigated by means of core and valence level photoemission. Angle‐resolved photoelectron spectra (photon energy 30–110 eV) exhibited emission from the Ga 3d and N 2s levels, as well as a clear peak structure in the valence band region. These peaks were found to shift with photon energy, indicative of direct transitions between occupied and unoccupied GaN bands. By using a free electron final band, we are able to derive the course of the bands along the Γ‐X and Γ‐K‐X directions of the Brillouin zone and to determine the energy of critical points at the X point. The relative energies of the Ga 3d and nitrogen 2s bands were also studied, and a small amount of dispersion was detected in the latter. The resulting band structure is discussed in relation to existing band structure calculations