Add to ORKGPostprintTrabajo presentado en ESSCIRC 2004. 29th European Solid-State Circuits Conference, Estoril, Portugal, 2003Based on mismatch measurements performed on very different CMOS technologies and large operating temperature range, we propose to model more adequately the mismatch in weak and moderate inversion by adding a new term related to the mismatch of the body effect factor dependence on the gate voltage. The model is introduced in a top-down analog design methodology, applied to the current mirror case, revealing some nonobvious design rules as well as typical misconceptions
Due to device and voltage scaling scenarios for present and future deep-submicron CMOS technologies,...
Statistical drain-current differences between pairs of supposedly identical transistors, usually kno...
In this paper, we show and validate a reliable circuit design technique based on source voltage shif...
PostprintTrabajo presentado en ESSCIRC 2004. 29th European Solid-State Circuits Conference, Estoril,...
Based on mismatch measurements performed on very different CMOS technologies and large operating tem...
We have measured the current matching properties of MOS transistors operated in the weak inversion r...
This work maps mismatch modeling for CMOS transistor in strong and weak inversion region. The goal i...
State-of-the art electronic systems include ever more features and gather mixed-signal subsystems, p...
Electron device matching has been a key factor on the performance of today’s analog or even digital ...
Electron device matching has been a key factor on the performance of today’s analog or even digital ...
PostprintThis work presents an approach for accurate MOS transistor matching calculation. Our model,...
This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier...
This paper analyzes the feasibility of using metal-oxide-semiconductor field-effect transistors (MOS...
For correct operation, certain analog and digital circuits, such as current mirrors or SRAM, require...
Mismatch between identically designed MOS transistors plays an important role in the performance of ...
Due to device and voltage scaling scenarios for present and future deep-submicron CMOS technologies,...
Statistical drain-current differences between pairs of supposedly identical transistors, usually kno...
In this paper, we show and validate a reliable circuit design technique based on source voltage shif...
PostprintTrabajo presentado en ESSCIRC 2004. 29th European Solid-State Circuits Conference, Estoril,...
Based on mismatch measurements performed on very different CMOS technologies and large operating tem...
We have measured the current matching properties of MOS transistors operated in the weak inversion r...
This work maps mismatch modeling for CMOS transistor in strong and weak inversion region. The goal i...
State-of-the art electronic systems include ever more features and gather mixed-signal subsystems, p...
Electron device matching has been a key factor on the performance of today’s analog or even digital ...
Electron device matching has been a key factor on the performance of today’s analog or even digital ...
PostprintThis work presents an approach for accurate MOS transistor matching calculation. Our model,...
This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier...
This paper analyzes the feasibility of using metal-oxide-semiconductor field-effect transistors (MOS...
For correct operation, certain analog and digital circuits, such as current mirrors or SRAM, require...
Mismatch between identically designed MOS transistors plays an important role in the performance of ...
Due to device and voltage scaling scenarios for present and future deep-submicron CMOS technologies,...
Statistical drain-current differences between pairs of supposedly identical transistors, usually kno...
In this paper, we show and validate a reliable circuit design technique based on source voltage shif...