Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using ZrOi-Pr)2(thd)2 and O2

Chen, H. -W.
Huang, T. -Y.
Landheer, D.
Wu, X.
Moisa, S.
Sproule, G. I.
Chao, T. -S.

January 2002

The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precu...

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

��

November 2009

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was ...

An evaluation of the electrical, material, and reliability characteristics and process viability of ZrO₂ and ZrOxNy for future generation MOS gate dielectric

Nieh, Renee Elizabeth

January 2002

textOver the past decades, continuing advancements in processes and tools and the introduction of n...

Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric

Koh, B.H.
Ng, T.H.
Zheng, J.X.
Chim, W.K.
Choi, W.K.

January 2002

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE135-14

The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations

Wang, S.J.
Dong, Y.F.
Huan, C.H.A.
Feng, Y.P.
Ong, C.K.

April 2005

10.1016/j.mseb.2004.12.023Materials Science and Engineering B: Solid-State Materials for Advanced Te...

Temperature dependence of the tunnel-emission conduction current in metal-ZrO2-silicon capacitor structures

Ming-Tsong Wang

Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes

Weinreich, W.
Shariq, A.
Seidel, K.
Sundqvist, J.
Paskaleva, A.
Lemberger, M.
Bauer, A.J.

January 2013

ZrO2-based metal-insulator-metal capacitors are used in various volatile and nonvolatile memory devi...

Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

I. Flavia Princess Nesamani
V. Lakshmi Prabha
Aswathy Paul
D. Nirmal

January 2014

Zirconium dioxide is a prospective high-κ material that can replace silicon dioxide. Zirconium dioxi...

Electron conduction mechanism and band diagram of sputter-deposited Al/ZrO2/Si structure

Fu-Chien Chiu
Zhi-Hong Lin
Che-Wei Chang
Chen-Chih Wang
Kun-Fu Chuang
Chih-Yao Huang
Joseph Ya-min Lee
Huey-Liang Hwang

[[abstract]]Metal-oxide-semiconductor capacitors that incorporate ZrO2 gate dielectrics were fabrica...

ZrO2 thin films on Si substrate

Wong, Y.H.
Cheong, K.Y.

October 2010

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as out...

ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes

Johansson, Mikael
Yousif, M. Y. A.
Sareen, Alok
Lundgren, Per
Bengtsson, Stefan
S\uf6dervall, Ulf

January 2002

The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evapor...

Growth and electrical properties of atomic-layer deposited ZrO2 /Si-nitride stack gate dielectrics

Ishii, Hiroyuki
Nakajima, Anri
Yokoyama, Shin

January 2004

We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...

Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics

Kumar, Arvind
Mondal, Sandip
Rao, Koteswara KSR

January 2016

The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...

Poole-Frenkel conduction in Al/ZrO

P. V. Aleskandrova
V. K. Gueorguiev
Tz. E. Ivanov
J. B. Koprinarova

August 2006

Leakage currents through Al/ZrO2/SiO2/n-Si metal-insulator-semiconductor (MIS) capacitors were studi...

to ZrO 2 n-channel MOS Capacitor

Yang-yu Fan
Renee E. Nieh
Jack C. Lee
Gerry Lucovsky
George A. Brown
Leonard Frank Register
Sanjay K. Banerjee

December 2014

Abstract—Based on the energy-dispersion relation in each region of the gate-dielectric-silicon syste...

Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using ZrOi-Pr)2(thd)2 and O2

Chen, H. -W.
Huang, T. -Y.
Landheer, D.
Wu, X.
Moisa, S.
Sproule, G. I.
Chao, T. -S.

January 2002

The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precu...

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

��

November 2009

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was ...

An evaluation of the electrical, material, and reliability characteristics and process viability of ZrO₂ and ZrOxNy for future generation MOS gate dielectric

Nieh, Renee Elizabeth

January 2002

textOver the past decades, continuing advancements in processes and tools and the introduction of n...

Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric

Koh, B.H.
Ng, T.H.
Zheng, J.X.
Chim, W.K.
Choi, W.K.

January 2002

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE135-14

The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations

Wang, S.J.
Dong, Y.F.
Huan, C.H.A.
Feng, Y.P.
Ong, C.K.

April 2005

10.1016/j.mseb.2004.12.023Materials Science and Engineering B: Solid-State Materials for Advanced Te...

Temperature dependence of the tunnel-emission conduction current in metal-ZrO2-silicon capacitor structures

Ming-Tsong Wang

Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes

Weinreich, W.
Shariq, A.
Seidel, K.
Sundqvist, J.
Paskaleva, A.
Lemberger, M.
Bauer, A.J.

January 2013

ZrO2-based metal-insulator-metal capacitors are used in various volatile and nonvolatile memory devi...

Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

I. Flavia Princess Nesamani
V. Lakshmi Prabha
Aswathy Paul
D. Nirmal

January 2014

Zirconium dioxide is a prospective high-κ material that can replace silicon dioxide. Zirconium dioxi...

Electron conduction mechanism and band diagram of sputter-deposited Al/ZrO2/Si structure

Fu-Chien Chiu
Zhi-Hong Lin
Che-Wei Chang
Chen-Chih Wang
Kun-Fu Chuang
Chih-Yao Huang
Joseph Ya-min Lee
Huey-Liang Hwang

[[abstract]]Metal-oxide-semiconductor capacitors that incorporate ZrO2 gate dielectrics were fabrica...

ZrO2 thin films on Si substrate

Wong, Y.H.
Cheong, K.Y.

October 2010

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as out...

ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes

Johansson, Mikael
Yousif, M. Y. A.
Sareen, Alok
Lundgren, Per
Bengtsson, Stefan
S\uf6dervall, Ulf

January 2002

The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evapor...

Growth and electrical properties of atomic-layer deposited ZrO2 /Si-nitride stack gate dielectrics

Ishii, Hiroyuki
Nakajima, Anri
Yokoyama, Shin

January 2004

We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...

Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics

Kumar, Arvind
Mondal, Sandip
Rao, Koteswara KSR

January 2016

The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...

Poole-Frenkel conduction in Al/ZrO

P. V. Aleskandrova
V. K. Gueorguiev
Tz. E. Ivanov
J. B. Koprinarova

August 2006

Leakage currents through Al/ZrO2/SiO2/n-Si metal-insulator-semiconductor (MIS) capacitors were studi...

to ZrO 2 n-channel MOS Capacitor

Yang-yu Fan
Renee E. Nieh
Jack C. Lee
Gerry Lucovsky
George A. Brown
Leonard Frank Register
Sanjay K. Banerjee

December 2014

Abstract—Based on the energy-dispersion relation in each region of the gate-dielectric-silicon syste...

Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using ZrOi-Pr)2(thd)2 and O2

Chen, H. -W.
Huang, T. -Y.
Landheer, D.
Wu, X.
Moisa, S.
Sproule, G. I.
Chao, T. -S.

January 2002

The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precu...

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

��

November 2009

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was ...

An evaluation of the electrical, material, and reliability characteristics and process viability of ZrO₂ and ZrOxNy for future generation MOS gate dielectric

Nieh, Renee Elizabeth

January 2002

textOver the past decades, continuing advancements in processes and tools and the introduction of n...

Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

Abstract

Extracted data

Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

Abstract

Extracted data

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