10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
On the road towards next-generation high-mobility channel CMOS and optoelectronic devices, new mater...
We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strai...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C...
10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7....
The GeSn/Ge pMOSFETs with a novel GeSnON interlayer formed by the Sn-assisted oxynitridation method ...
10.1109/VLSI-TSA.2013.65456072013 International Symposium on VLSI Technology, Systems and Applicatio...
Compressively strained germanium tin (GeSn) channel P-MOSFETs have recently been demonstrated to ach...
This paper systematically studies GeSn n-FETs, from individual process modules to a complete device....
This paper systematically studies GeSn n-FETs, from individual process modules to a complete device....
Ultrathin GeSn layers with a thickness of 5.5 nm are fabricated on a Si(111) substrate by solid phas...
Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have bee...
The semiconducting alloy germanium tin (GeSn) is expected to play an important role in the developme...
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, res...
On the road towards next-generation high-mobility channel CMOS and optoelectronic devices, new mater...
We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strai...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C...
10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7....
The GeSn/Ge pMOSFETs with a novel GeSnON interlayer formed by the Sn-assisted oxynitridation method ...
10.1109/VLSI-TSA.2013.65456072013 International Symposium on VLSI Technology, Systems and Applicatio...
Compressively strained germanium tin (GeSn) channel P-MOSFETs have recently been demonstrated to ach...
This paper systematically studies GeSn n-FETs, from individual process modules to a complete device....
This paper systematically studies GeSn n-FETs, from individual process modules to a complete device....
Ultrathin GeSn layers with a thickness of 5.5 nm are fabricated on a Si(111) substrate by solid phas...
Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have bee...
The semiconducting alloy germanium tin (GeSn) is expected to play an important role in the developme...
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, res...
On the road towards next-generation high-mobility channel CMOS and optoelectronic devices, new mater...
We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strai...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
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