10.1109/ESSDER.2005.1546663Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference2005375-37
The material and electrical properties of HfO2 high-k gate dielectric are reported. In the first par...
By using a high-temperature gate-first process, HfN-HfO2-gated nMOSFET with 0.95-nm equivalent oxide...
We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anne...
High quality TaN/HfN/HfO2 gate stacks with 0.65 nm of the equivalent oxide thickness and 0.3 A/cm(2)...
We report for the first time a thermally stable and high quality HfN/HfO2 gate stack for advanced CM...
Metal-oxide-semiconductor (MOS) devices using a thermally robust HfN/HfO2 gate stack were fabricated...
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT2808-8...
(Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential...
[[abstract]]In this work, the composition effects of hafnium (Hf) and tantalum (Ta) in HfxTayN metal...
We investigated the electrical properties of TaN/HfO2/Si gate stack structure. It was found that the...
[[abstract]]In this letter, the composition effects of hafnium (Hf) and tantalum (Ta) in HfxTayN met...
In this letter, the positive-bias temperature instability (PBTI) characteristics of a TaN/HfN/HfO2 g...
High quality thermal robust CVD-HfO2 gate dielectrics witli HfN electrodes were fabricated. The scal...
High quality thermal robust CVD-HfO2 gate dielectrics with HfN electrodes were fabricated. The scala...
A novel replacement gate process employing a HfN dummy gate and sub-1-nm equivalent oxide thickness ...
The material and electrical properties of HfO2 high-k gate dielectric are reported. In the first par...
By using a high-temperature gate-first process, HfN-HfO2-gated nMOSFET with 0.95-nm equivalent oxide...
We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anne...
High quality TaN/HfN/HfO2 gate stacks with 0.65 nm of the equivalent oxide thickness and 0.3 A/cm(2)...
We report for the first time a thermally stable and high quality HfN/HfO2 gate stack for advanced CM...
Metal-oxide-semiconductor (MOS) devices using a thermally robust HfN/HfO2 gate stack were fabricated...
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT2808-8...
(Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential...
[[abstract]]In this work, the composition effects of hafnium (Hf) and tantalum (Ta) in HfxTayN metal...
We investigated the electrical properties of TaN/HfO2/Si gate stack structure. It was found that the...
[[abstract]]In this letter, the composition effects of hafnium (Hf) and tantalum (Ta) in HfxTayN met...
In this letter, the positive-bias temperature instability (PBTI) characteristics of a TaN/HfN/HfO2 g...
High quality thermal robust CVD-HfO2 gate dielectrics witli HfN electrodes were fabricated. The scal...
High quality thermal robust CVD-HfO2 gate dielectrics with HfN electrodes were fabricated. The scala...
A novel replacement gate process employing a HfN dummy gate and sub-1-nm equivalent oxide thickness ...
The material and electrical properties of HfO2 high-k gate dielectric are reported. In the first par...
By using a high-temperature gate-first process, HfN-HfO2-gated nMOSFET with 0.95-nm equivalent oxide...
We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anne...
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