10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7.3TDIM
This work presents HiK/metal gate Ge MOSFET devices with a conventional layout and made in a complet...
Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06164-16
Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving i...
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C...
10.1109/VLSI-TSA.2013.65456072013 International Symposium on VLSI Technology, Systems and Applicatio...
10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
Ultrathin GeSn layers with a thickness of 5.5 nm are fabricated on a Si(111) substrate by solid phas...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k me...
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
This paper systematically studies GeSn n-FETs, from individual process modules to a complete device....
As silicon MOSFETs have reached their saturation limits due to aggressive scaling, high mobility cha...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Comp...
10.1109/IEDM.2007.4418882Technical Digest - International Electron Devices Meeting, IEDM131-134TDIM
This work presents HiK/metal gate Ge MOSFET devices with a conventional layout and made in a complet...
Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06164-16
Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving i...
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C...
10.1109/VLSI-TSA.2013.65456072013 International Symposium on VLSI Technology, Systems and Applicatio...
10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
Ultrathin GeSn layers with a thickness of 5.5 nm are fabricated on a Si(111) substrate by solid phas...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k me...
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
This paper systematically studies GeSn n-FETs, from individual process modules to a complete device....
As silicon MOSFETs have reached their saturation limits due to aggressive scaling, high mobility cha...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Comp...
10.1109/IEDM.2007.4418882Technical Digest - International Electron Devices Meeting, IEDM131-134TDIM
This work presents HiK/metal gate Ge MOSFET devices with a conventional layout and made in a complet...
Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06164-16
Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving i...