10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings44-4
10.1109/IEDM.2008.4796700Technical Digest - International Electron Devices Meeting, IEDM-TDIM
We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation...
In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma ...
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C...
A novel surface passivation method was developed for HfO<sub>2</sub> Ge MOSFETs using in situ SiH<su...
10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7....
Compressively strained germanium tin (GeSn) channel P-MOSFETs have recently been demonstrated to ach...
Ge p-MOSFETs with two kinds of passivation methods, RTO-GeO2 interfacial layer and nitrogen-plasma-p...
The GeSn/Ge pMOSFETs with a novel GeSnON interlayer formed by the Sn-assisted oxynitridation method ...
A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the ...
In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 s...
10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
Results of surface passivation treatments on nitride and phosphide compound semiconductors are descr...
학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2015. 8. 황철성.Approaching with speed limit for nano-electronic device ...
10.1109/IEDM.2008.4796700Technical Digest - International Electron Devices Meeting, IEDM-TDIM
We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation...
In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma ...
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C...
A novel surface passivation method was developed for HfO<sub>2</sub> Ge MOSFETs using in situ SiH<su...
10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7....
Compressively strained germanium tin (GeSn) channel P-MOSFETs have recently been demonstrated to ach...
Ge p-MOSFETs with two kinds of passivation methods, RTO-GeO2 interfacial layer and nitrogen-plasma-p...
The GeSn/Ge pMOSFETs with a novel GeSnON interlayer formed by the Sn-assisted oxynitridation method ...
A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the ...
In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 s...
10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
Results of surface passivation treatments on nitride and phosphide compound semiconductors are descr...
학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2015. 8. 황철성.Approaching with speed limit for nano-electronic device ...
10.1109/IEDM.2008.4796700Technical Digest - International Electron Devices Meeting, IEDM-TDIM
We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation...
In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma ...
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