10.1109/VLSI-TSA.2013.65456072013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
Kolodzey, JamesThe germanium-tin (GeSn) alloys comprise a non-equilibrium solid solution of two grou...
10.1109/VLSIT.2010.5556240Digest of Technical Papers - Symposium on VLSI Technology233-234DTPT
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7....
10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
Ultrathin GeSn layers with a thickness of 5.5 nm are fabricated on a Si(111) substrate by solid phas...
10.1109/VTSA.2008.4530830International Symposium on VLSI Technology, Systems, and Applications, Proc...
10.1109/IEDM.2012.6479053Technical Digest - International Electron Devices Meeting, IEDM16.3.1-16.3....
An extensive and complete experimental investigation with a full layout design of the channel direct...
An extensive and complete experimental investigation with a full layout design of the channel direct...
10.1109/IEDM.2007.4418882Technical Digest - International Electron Devices Meeting, IEDM131-134TDIM
10.1109/VLSI-TSA.2012.6210151International Symposium on VLSI Technology, Systems, and Applications, ...
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
Kolodzey, JamesThe germanium-tin (GeSn) alloys comprise a non-equilibrium solid solution of two grou...
10.1109/VLSIT.2010.5556240Digest of Technical Papers - Symposium on VLSI Technology233-234DTPT
10.1109/VLSI-TSA.2013.65456152013 International Symposium on VLSI Technology, Systems and Applicatio...
10.1109/IEDM.2011.6131569Technical Digest - International Electron Devices Meeting, IEDM16.7.1-16.7....
10.1109/VLSIT.2012.6242479Digest of Technical Papers - Symposium on VLSI Technology97-98DTPT
We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C...
10.1109/ISTDM.2012.62224492012 International Silicon-Germanium Technology and Device Meeting, ISTDM ...
Ultrathin GeSn layers with a thickness of 5.5 nm are fabricated on a Si(111) substrate by solid phas...
10.1109/VTSA.2008.4530830International Symposium on VLSI Technology, Systems, and Applications, Proc...
10.1109/IEDM.2012.6479053Technical Digest - International Electron Devices Meeting, IEDM16.3.1-16.3....
An extensive and complete experimental investigation with a full layout design of the channel direct...
An extensive and complete experimental investigation with a full layout design of the channel direct...
10.1109/IEDM.2007.4418882Technical Digest - International Electron Devices Meeting, IEDM131-134TDIM
10.1109/VLSI-TSA.2012.6210151International Symposium on VLSI Technology, Systems, and Applications, ...
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
Kolodzey, JamesThe germanium-tin (GeSn) alloys comprise a non-equilibrium solid solution of two grou...
10.1109/VLSIT.2010.5556240Digest of Technical Papers - Symposium on VLSI Technology233-234DTPT
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