10.1116/1.1795251Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures2252384-2390JVTB
As there is a need to increase the number of transistors while lowering chip dimensions and reducing...
Copper films of different thicknesses of 0.2, 0.5, 1 and 2 microns were electroplated on top of the ...
Copper and low dielctric constantant (k) materials are poised to become the dominant interconnect sc...
The texture and stress properties of barrier layers on three types of low-k materials for copper (Cu...
Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) int...
2005 Proceedings - 22nd International VLSI Multilevel Interconnection Conference, VMIC 2005257-26
As a superior substituent for the chemical-vapor deposition and physical-vapor deposition ~PVD! Cu ...
Atomic layer deposition ͑ALD͒ was used to make conformal diffusion barrier layers of WN, adhesion la...
Cu has replaced Al as the main interconnection material in ultra-large integrated circuits, reducing...
Recent success of the advanced physical vapor deposition development allows highly engineered Ta/TaN...
high stress seed layer was changed to a low stress layer. Here, the s!, the by the V cm, e low diffe...
Bilayer of Ta/TaN is the common diffusion barrier for Cu metallization in microelectronics. However,...
Reliable and high-precision Cu/glass stacks are particularly desirable for microelectromechanical sy...
Improving the interface stability for nanosized thin films on brittle substrates is crucial for tech...
[[abstract]]As the electronics industry continues its efforts in miniaturizing the integrated circui...
As there is a need to increase the number of transistors while lowering chip dimensions and reducing...
Copper films of different thicknesses of 0.2, 0.5, 1 and 2 microns were electroplated on top of the ...
Copper and low dielctric constantant (k) materials are poised to become the dominant interconnect sc...
The texture and stress properties of barrier layers on three types of low-k materials for copper (Cu...
Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) int...
2005 Proceedings - 22nd International VLSI Multilevel Interconnection Conference, VMIC 2005257-26
As a superior substituent for the chemical-vapor deposition and physical-vapor deposition ~PVD! Cu ...
Atomic layer deposition ͑ALD͒ was used to make conformal diffusion barrier layers of WN, adhesion la...
Cu has replaced Al as the main interconnection material in ultra-large integrated circuits, reducing...
Recent success of the advanced physical vapor deposition development allows highly engineered Ta/TaN...
high stress seed layer was changed to a low stress layer. Here, the s!, the by the V cm, e low diffe...
Bilayer of Ta/TaN is the common diffusion barrier for Cu metallization in microelectronics. However,...
Reliable and high-precision Cu/glass stacks are particularly desirable for microelectromechanical sy...
Improving the interface stability for nanosized thin films on brittle substrates is crucial for tech...
[[abstract]]As the electronics industry continues its efforts in miniaturizing the integrated circui...
As there is a need to increase the number of transistors while lowering chip dimensions and reducing...
Copper films of different thicknesses of 0.2, 0.5, 1 and 2 microns were electroplated on top of the ...
Copper and low dielctric constantant (k) materials are poised to become the dominant interconnect sc...
DOI
Add to ORKG