Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes25101490-1494JAPN
Thin silicon nitride films were prepared at 350 degrees C by inductively coupled plasma chemical vap...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) techniq...
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using...
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using...
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using...
The composition of silicon nitride films deposited from a mixture of Ar, N2, and SiH4, at low temper...
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using...
This paper reports on the preparation and characterization of thin films of silicon nitride deposite...
We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon ni...
This paper reports on the preparation and characterization of thin films of silicon nitride deposite...
Thin silicon nitride films were prepared at 350 degrees C by inductively coupled plasma chemical vap...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Thin silicon nitride films were prepared at 350 degrees C by inductively coupled plasma chemical vap...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) techniq...
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using...
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using...
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using...
The composition of silicon nitride films deposited from a mixture of Ar, N2, and SiH4, at low temper...
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using...
This paper reports on the preparation and characterization of thin films of silicon nitride deposite...
We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon ni...
This paper reports on the preparation and characterization of thin films of silicon nitride deposite...
Thin silicon nitride films were prepared at 350 degrees C by inductively coupled plasma chemical vap...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Thin silicon nitride films were prepared at 350 degrees C by inductively coupled plasma chemical vap...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system a...