10.1109/22.643741IEEE Transactions on Microwave Theory and Techniques4512 PART 12084-2088IETM
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
We report on the characterization and modelling of a microwave MOSFET. We have characterized the tes...
A new and accurate parameter extraction method for SOI MOSFET small-signal equivalent circuit is pre...
10.1002/1098-2760(20010220)28:4<278Microwave and Optical Technology Letters284278-282MOTL
Models are developed for the de I-V curves and microwave small-signal parameters of the GaAs MESFET ...
The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an ever...
An improved method to determine the broad-band small-signal equivalent circuit of field effect trans...
This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-...
The authors have developed a method for extracting the channel and gate diode parameters for a GaAs ...
Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron m...
Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent Universit...
Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron m...
Non-linear equivalent circuits of microwave field-effect transistors (MESFET's, HEMT's) are now reco...
For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens...
An appropriate procedure making possible to evaluate the sensitivity of a MESFET small-signal model ...
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
We report on the characterization and modelling of a microwave MOSFET. We have characterized the tes...
A new and accurate parameter extraction method for SOI MOSFET small-signal equivalent circuit is pre...
10.1002/1098-2760(20010220)28:4<278Microwave and Optical Technology Letters284278-282MOTL
Models are developed for the de I-V curves and microwave small-signal parameters of the GaAs MESFET ...
The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an ever...
An improved method to determine the broad-band small-signal equivalent circuit of field effect trans...
This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-...
The authors have developed a method for extracting the channel and gate diode parameters for a GaAs ...
Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron m...
Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent Universit...
Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron m...
Non-linear equivalent circuits of microwave field-effect transistors (MESFET's, HEMT's) are now reco...
For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens...
An appropriate procedure making possible to evaluate the sensitivity of a MESFET small-signal model ...
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
We report on the characterization and modelling of a microwave MOSFET. We have characterized the tes...
A new and accurate parameter extraction method for SOI MOSFET small-signal equivalent circuit is pre...
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