Un amplificador de potencia de dos etapas de clase AB en cascada operando a 2.4Ghz fue diseñado para un proceso de CMOS de 130nm para aplicaciones Bluetooth de Clase-1. El amplificador de poder fue polarizado en una clase AB para un mejor punto medio entre linealidad y eficiencia. El amplificador de potencia propuesto tiene una eficiencia total de 39.6%, una ganancia de potencia de 25dB y una salida de poder de 20dBm
In recent RF front-end IC designs, CMOS technology has gained much more popularity for its low cost ...
Este artículo muestra el diseño y la caracterización de dos amplificadores de potencia de alta efici...
A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technol...
Un amplificador de potencia de dos etapas de clase AB en cascada operando a 2.4Ghz fue diseñado para...
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 pow...
With recent advance in CMOS processes, many essential building blocks for wireless transceivers, suc...
This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications ...
Modern fully integrated transceivers architectures, require circuits with low area, low cost, low p...
The main purpose of this paper is to present the design of a class E power amplifier for Bluetooth C...
A two-stage power amplifier operated at 2.4 GHz is designed and fabricated in a standard 0.35-mum CM...
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 pow...
El objetivo de este trabajo consiste en analizar en que consiste la normativa Bluetooth v1.1, como s...
RESUMEN Este documento describe a Bluetooth, una tecnologla que pronto eliminará los cables para l...
A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35mu...
É apresentado um amplificador de potência (PA) com controle digital da potência de saída, operando n...
In recent RF front-end IC designs, CMOS technology has gained much more popularity for its low cost ...
Este artículo muestra el diseño y la caracterización de dos amplificadores de potencia de alta efici...
A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technol...
Un amplificador de potencia de dos etapas de clase AB en cascada operando a 2.4Ghz fue diseñado para...
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 pow...
With recent advance in CMOS processes, many essential building blocks for wireless transceivers, suc...
This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications ...
Modern fully integrated transceivers architectures, require circuits with low area, low cost, low p...
The main purpose of this paper is to present the design of a class E power amplifier for Bluetooth C...
A two-stage power amplifier operated at 2.4 GHz is designed and fabricated in a standard 0.35-mum CM...
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 pow...
El objetivo de este trabajo consiste en analizar en que consiste la normativa Bluetooth v1.1, como s...
RESUMEN Este documento describe a Bluetooth, una tecnologla que pronto eliminará los cables para l...
A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35mu...
É apresentado um amplificador de potência (PA) com controle digital da potência de saída, operando n...
In recent RF front-end IC designs, CMOS technology has gained much more popularity for its low cost ...
Este artículo muestra el diseño y la caracterización de dos amplificadores de potencia de alta efici...
A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technol...