10.1109/SISPAD.2006.282883International Conference on Simulation of Semiconductor Processes and Devices, SISPAD252-25
An SOI MOSFET with FINFET structure is simulated using a 3-D simulator. I-V characteristics and sub-...
The intensive downscaling of MOS transistors has been the major driving force behind the aggressive ...
The impact of a high-k dielectrics and the effect of downscaling on the device performance of nanosc...
In this paper, we investigate capacitive effect of multi-fins FinFET using the TCAD simulations. The...
A 2-Dimensional (2D) FinFET simulation is presented in this study.The simulation studies are conduct...
In this paper, the impact of important geometrical parameters such as source and drain thickness, fi...
A 2-Dimensional (2D) FinFET simulation is presented in this study.The simulation studies are conduct...
The conventional transistor device has been effective to provide for continual improvements in integ...
In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on t...
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET) t...
Report for the scientific sojourn carried out at the Université Catholique de Louvain, Belgium, fro...
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and...
This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method,...
Coupled three-dimensional process and device simulations have been applied to study effects limiting...
Technology scaling below 22 nm has brought several detrimental effects such as increased short chann...
An SOI MOSFET with FINFET structure is simulated using a 3-D simulator. I-V characteristics and sub-...
The intensive downscaling of MOS transistors has been the major driving force behind the aggressive ...
The impact of a high-k dielectrics and the effect of downscaling on the device performance of nanosc...
In this paper, we investigate capacitive effect of multi-fins FinFET using the TCAD simulations. The...
A 2-Dimensional (2D) FinFET simulation is presented in this study.The simulation studies are conduct...
In this paper, the impact of important geometrical parameters such as source and drain thickness, fi...
A 2-Dimensional (2D) FinFET simulation is presented in this study.The simulation studies are conduct...
The conventional transistor device has been effective to provide for continual improvements in integ...
In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on t...
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET) t...
Report for the scientific sojourn carried out at the Université Catholique de Louvain, Belgium, fro...
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and...
This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method,...
Coupled three-dimensional process and device simulations have been applied to study effects limiting...
Technology scaling below 22 nm has brought several detrimental effects such as increased short chann...
An SOI MOSFET with FINFET structure is simulated using a 3-D simulator. I-V characteristics and sub-...
The intensive downscaling of MOS transistors has been the major driving force behind the aggressive ...
The impact of a high-k dielectrics and the effect of downscaling on the device performance of nanosc...
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