Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06164-16
Metal germanosilicides can be widely used in polysilicon gates and single crystalline source/drain a...
The material characteristics of nickel germanosilicides are analyzed in this paper, and the contact ...
Ti- and Ni-germanides were fabricated on n-Ge (100) substrates by sputtering metal Ti or Ni on Ge fo...
10.1109/IWJT.2007.4279953Extended Abstracts of the 7th International Workshop on Junction Technology...
91 p.Schottky diodes have been widely used in power detection and microwave circuits due to their hi...
The continued scaling of device dimensions in complementary metal oxide semiconductor (CMOS) technol...
We have measured the physical properties and resistivity of nickel germanide thin films formed by th...
In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and s...
The material and electrical characterization of nickel germanides on pure n-(100) Ge are investigate...
In this study, Ni germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputt...
Ni(Pt) alloy-silicided/Si1-xGex Schottky barrier diodes have been fabricated by annealing the co-dep...
In this study, we investigated fabrication and characteristics of germanides Schottky contacts on ge...
Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06160-16
Includes bibliographical references.Includes illustrations.In 1948 the first transistor was develope...
Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during...
Metal germanosilicides can be widely used in polysilicon gates and single crystalline source/drain a...
The material characteristics of nickel germanosilicides are analyzed in this paper, and the contact ...
Ti- and Ni-germanides were fabricated on n-Ge (100) substrates by sputtering metal Ti or Ni on Ge fo...
10.1109/IWJT.2007.4279953Extended Abstracts of the 7th International Workshop on Junction Technology...
91 p.Schottky diodes have been widely used in power detection and microwave circuits due to their hi...
The continued scaling of device dimensions in complementary metal oxide semiconductor (CMOS) technol...
We have measured the physical properties and resistivity of nickel germanide thin films formed by th...
In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and s...
The material and electrical characterization of nickel germanides on pure n-(100) Ge are investigate...
In this study, Ni germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputt...
Ni(Pt) alloy-silicided/Si1-xGex Schottky barrier diodes have been fabricated by annealing the co-dep...
In this study, we investigated fabrication and characteristics of germanides Schottky contacts on ge...
Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06160-16
Includes bibliographical references.Includes illustrations.In 1948 the first transistor was develope...
Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during...
Metal germanosilicides can be widely used in polysilicon gates and single crystalline source/drain a...
The material characteristics of nickel germanosilicides are analyzed in this paper, and the contact ...
Ti- and Ni-germanides were fabricated on n-Ge (100) substrates by sputtering metal Ti or Ni on Ge fo...
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