Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
- Lousberg, G.P.
- Yu, H.Y.
- Froment, B.
- Li, M.F.
- Augendre, E.
- De Keersgieter, A.
- Demeurisse, C.
- Brus, S.
- Degroote, B.
- Hoffmann, T.
- Lauwers, A.
- DePotter, M.
- Kubicek, S.
- Anil, K.
- Absil, P.
- Jurczak, M.
- Biesemans, S.
Publication date
January 2007
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
10.1109/ESSDER.2006.307694ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference286-28
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