Add to ORKGby Poon Sai Keung.Thesis (M.Phil.)--Chinese University of Hong Kong, 1978.Includes bibliographical references (leaves 92-94)
S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD met...
The effect of the amorphous and glassy structure of amorphous germanium films on their electrical ch...
Hydrogenated amorphous silicon (a-Si:H) thin films were deposited at low temperature by electron cyc...
Pui-kong Lim.Thesis (M.Phil.)--Chinese University of Hong Kong.Bibliography: leaves 73-75
This work describes the temperature-induced crystallization of amorphous Ge (a-Ge) as a function of ...
by Cheung-Yin Tang.Title also in Chinese.Thesis (M.Phil.)--Chinese University of Hong Kong, 1991.Bib...
The variation of the structure, morphology and the electrical properties of thin amorphous silicon f...
Amorphous Silicon Germanium (a-SiGe) thin films of 500 nm thickness are deposited on silicon substra...
The behavior of amorphous Si in contact with Ag films and Ge in contact with Al films has been studi...
by Kim-chung Koon.Chinese title:Bibliography: leaves 108-112Thesis (M.Phil.)--Chinese University of ...
In this experimental study, Structural, electrical and optical properties of as-grown and annealed f...
Amorphous Silicon (a-Si:H) has been extensively used as a solar cell material because of its low cos...
The crystallization behavior of polycrystalline silicon (Si) and germanium-silicon alloys (GexSi1−x)...
The work described in this thesis is concerned with the growth and examination of thin Si and Ge fil...
by Ho Wai Hung.Thesis (M.Ph.)--Chinese University of Hong Kong, 1988.Bibliography: leaves 81-83
S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD met...
The effect of the amorphous and glassy structure of amorphous germanium films on their electrical ch...
Hydrogenated amorphous silicon (a-Si:H) thin films were deposited at low temperature by electron cyc...
Pui-kong Lim.Thesis (M.Phil.)--Chinese University of Hong Kong.Bibliography: leaves 73-75
This work describes the temperature-induced crystallization of amorphous Ge (a-Ge) as a function of ...
by Cheung-Yin Tang.Title also in Chinese.Thesis (M.Phil.)--Chinese University of Hong Kong, 1991.Bib...
The variation of the structure, morphology and the electrical properties of thin amorphous silicon f...
Amorphous Silicon Germanium (a-SiGe) thin films of 500 nm thickness are deposited on silicon substra...
The behavior of amorphous Si in contact with Ag films and Ge in contact with Al films has been studi...
by Kim-chung Koon.Chinese title:Bibliography: leaves 108-112Thesis (M.Phil.)--Chinese University of ...
In this experimental study, Structural, electrical and optical properties of as-grown and annealed f...
Amorphous Silicon (a-Si:H) has been extensively used as a solar cell material because of its low cos...
The crystallization behavior of polycrystalline silicon (Si) and germanium-silicon alloys (GexSi1−x)...
The work described in this thesis is concerned with the growth and examination of thin Si and Ge fil...
by Ho Wai Hung.Thesis (M.Ph.)--Chinese University of Hong Kong, 1988.Bibliography: leaves 81-83
S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD met...
The effect of the amorphous and glassy structure of amorphous germanium films on their electrical ch...
Hydrogenated amorphous silicon (a-Si:H) thin films were deposited at low temperature by electron cyc...