Accuracy improvement in XPS by low energy argon ion.

Tam Yi Mei.Thesis (M.Phil.)--Chinese University of Hong Kong, 2004.Includes bibliographical references.Abstracts in English and Chinese.Abstract --- p.ii摘要 --- p.iiiAcknowledgement --- p.ivTable of Contents --- p.vList of Figures --- p.ixList of Tables --- p.xiiChapter Chapter 1 --- Background of study --- p.1Chapter 1.1 --- Introduction --- p.1Chapter 1.2 --- Theoretical background of XPS --- p.2Chapter 1.2.1 --- Principle of XPS --- p.2Chapter 1.2.2 --- Surface sensitivity --- p.6Chapter 1.2.3 --- Inelastic Mean Free Path (IMFP) --- p.6Chapter 1.3 --- XPS spectral features --- p.7Chapter 1.3.1 --- Chemical shift --- p.8Chapter 1.3.2 --- Spin orbital splitting (SOS) --- p.8Chapter 1.4 --- Quantitative analysis in XPS --- p.10Chapter 1.4.1 --- Atomic concentration --- p.10Chapter 1.4.2 --- Layer thickness determination --- p.11Chapter 1.5 --- The new XPS analysis technique in the present study --- p.14Chapter 1.5.1 --- Ion sputtering --- p.14Chapter 1.5.1.1 --- Sputtering-induced defects --- p.16Chapter 1.5.1.2 --- Effects of ion incident angle --- p.17Chapter 1.5.1.3 --- Depth resolution --- p.17Chapter 1.5.2 --- Perpendicular detection --- p.19Chapter 1.6 --- Objectives of present study --- p.23References for Chapter1 --- p.24Chapter Chapter 2 --- Instrumentation --- p.28Chapter 2.1 --- Introduction --- p.28Chapter 2.2 --- X-ray Photoelectron Spectroscopy --- p.28Chapter 2.2.1 --- XPS used in the present study --- p.28Chapter 2.2.2 --- Vacuum requirements --- p.29Chapter 2.2.3 --- X-ray source --- p.29Chapter 2.2.4 --- Charge Neutralizer --- p.33Chapter 2.2.5 --- Ion sputtering gun --- p.34Chapter 2.2.6 --- Electron energy analyzer --- p.36Chapter 2.2.6.1 --- Energy resolution --- p.38Chapter 2.2.6.2 --- Pass energy --- p.38Chapter 2.2.7 --- Electron detector / Multiplier --- p.39Chapter 2.3 --- Other analysis techniques for verification --- p.42Chapter 2.3.1 --- Energy Dispersive X-ray detector in Scanning Electron Microscope (SEM-EDX) --- p.42Chapter 2.3.2 --- X-ray Fluorescence Spectrometer (XRF) --- p.42Chapter 2.3.3 --- Rutherford Backscattering Spectrometer (RBS) --- p.43Chapter 2.3.4 --- Differential Scanning Calorimeter (DSC) --- p.44References for Chapter2 --- p.45Chapter Chapter 3 --- Determination of the thickness of the damaged layer --- p.46Chapter 3.1 --- Introduction --- p.46Chapter 3.2 --- Experimentation --- p.46Chapter 3.2.1 --- Instrumentation --- p.46Chapter 3.2.1.1 --- Work function calibration --- p.48Chapter 3.2.1.2 --- Sputtering ion beam calibration --- p.49Chapter 3.2.2 --- Sample preparation --- p.49Chapter 3.2.3 --- XPS measurements --- p.51Chapter 3.3 --- Results and discussion --- p.53Chapter 3.3.1 --- Spectral analysis and peak fitting --- p.53Chapter 3.3.2 --- Modeling and damaged layer thickness determination --- p.59Chapter 3.3.3 --- TRIM simulation --- p.62Chapter 3.4 --- Conclusion --- p.65References for Chapter3 --- p.68Chapter Chapter 4 --- Applications of the new XPS technique to different materials --- p.70Chapter 4.1 --- Introduction --- p.70Chapter 4.2 --- Analysis of ceramic --- p.70Chapter 4.2.1 --- Experimentation --- p.71Chapter 4.2.2 --- XPS results and comparison with other analysis techniques --- p.74Chapter 4.3 --- Analysis of metal alloys --- p.77Chapter 4.3.1 --- Experimentation for the tin-lead solder bump analysis --- p.78Chapter 4.3.2 --- Calibration of XPS sensitivity --- p.78Chapter 4.4 --- Development of XPS analysis method for the tin-silver solder bump measurement --- p.82Chapter 4.4.1 --- Experimentation --- p.83Chapter 4.4.2 --- XPS results --- p.83Chapter 4.5 --- Analysis of polymer (Polyacrylic acid) --- p.84Chapter 4.5.1 --- XPS results --- p.84Chapter 4.6 --- Analysis of Indium Phosphide --- p.90Chapter 4.6.1 --- XPS results --- p.92Chapter 4.7 --- Analysis of Gallium Arsenide --- p.96Chapter 4.8 --- Conclusion --- p.100References for Chapter4 --- p.101Chapter Chapter 5 --- Conclusions --- p.10