Cai yong mai chong zhi liu dian yuan dui ba jian she ji shu zhi bei yin xi yang hua wu bo mo de yan jiu

by Fung Chi Keung = 採用脈衝直流電源對靶濺射技術製備銦錫氧化物薄膜的硏究 / 馮志強.Thesis (M.Phil.)--Chinese University of Hong Kong, 2000.Includes bibliographical references.Text in English; abstracts in English and Chinese.by Fung Chi Keung = Cai yong mai chong zhi liu dian yuan dui ba jian she ji shu zhi bei yin xi yang hua wu bo mo de yan jiu / Feng Zhiqiang.Acknowledgements --- p.iAbstract --- p.ii論文摘要 --- p.iiiTable of contents --- p.ivList of figures --- p.viiiList of tables --- p.xiiChapter Chapter 1 --- Introduction --- p.1-1Chapter 1.1 --- Genesis --- p.1-1Chapter 1.2 --- Aims and Objectives --- p.1-1Chapter 1.3 --- Layout of Thesis --- p.1-3References --- p.1-4Chapter Chapter 2 --- Literature Review --- p.2-1Chapter 2.1 --- Introduction to transparent conducting oxides (TCOs) --- p.2-1Chapter 2.2 --- Indium tin oxide (ITO) --- p.2-2Chapter 2.2.1 --- Use of ITO --- p.2-2Chapter 2.2.2 --- Structure and properties of ITO --- p.2-3Chapter 2.3 --- Properties of ITO films deposited by different growth techniques --- p.2-8Chapter 2.3.1 --- Sputtering --- p.2-9Chapter 2.3.2 --- Vacuum evaporation --- p.2-11Chapter 2.3.3 --- Spray pyrolysis --- p.2-11Chapter 2.3.4 --- Chemical vapor deposition (CVD) --- p.2-12Chapter 2.3.5 --- Reactive ion plating --- p.2-12Chapter 2.4 --- Contradictions in existing literature --- p.2-13References --- p.2-15Chapter Chapter 3 --- Thin Film Fabrication and Process --- p.3-1Chapter 3.1 --- Facing-target sputtering (FTS) --- p.3-1Chapter 3.2 --- Asymmetric bipolar pulsed DC power source --- p.3-3Chapter 3.2.1 --- Target poisoning --- p.3-3Chapter 3.2.2 --- Preferential sputtering --- p.3-4Chapter 3.2.3 --- Discussion --- p.3-4Chapter 3.3 --- Substrates --- p.3-6Chapter 3.3.1 --- Microscopic glass --- p.3-7Chapter 3.3.2 --- Corning 7059 glass --- p.3-8Chapter 3.3.3 --- Epitaxial growth --- p.3-8Chapter 3.3.3.1 --- Epitaxial lattice matching --- p.3-8Chapter 3.3.3.2 --- Yttrium stabilized zirconia (YSZ) --- p.3-9Chapter 3.3.3.3 --- Sapphire --- p.3-9Chapter 3.3.3.4 --- Silicon wafer --- p.3-11Chapter 3.3.4 --- Substrate cleaning --- p.3-11Chapter 3.4 --- Targets for the reactive sputtering of ITO films --- p.3-13Chapter 3.4.1 --- Indium Tin Oxide target (90wt% ln203 : 10wt% Sn04) --- p.3-14Chapter 3.4.2 --- Indium Tin alloy target (90wt% In : 10wt% Sn) --- p.3-14Chapter 3.5 --- Deposition conditions --- p.3-16Chapter 3.5.1 --- Sputter atmosphere --- p.3-16Chapter 3.5.2 --- Deposition pressure --- p.3-16Chapter 3.5.3 --- Deposition power --- p.3-17Chapter 3.5.4 --- Target to substrate distance --- p.3-17Chapter 3.5.5 --- Pulse frequency and pulse width --- p.3-17Chapter 3.6 --- Deposition --- p.3-17References --- p.3-19Chapter Chapter 4 --- Measurement and Analysis Techniques --- p.4-1Chapter 4.1 --- Resistivity measurement --- p.4-1Chapter 4.2 --- "Transmittance, reflectivity and absorption measurements" --- p.4-3Chapter 4.3 --- Thickness measurement --- p.4-4Chapter 4.4 --- "Crystal structure, surface morphology and roughness measurements" --- p.4-4Chapter 4.5 --- Photolithography --- p.4-7Chapter 4.6 --- Hall effect measurements --- p.4-8References --- p.4-10Chapter Chapter 5 --- Experimental results and discussions --- p.5-1Chapter 5.1 --- Effect of O2 partial pressure --- p.5-1Chapter 5.1.1 --- Deposition rate --- p.5-2Chapter 5.1.2 --- Electrical and optical properties --- p.5-4Chapter 5.1.3 --- Structure and orientation --- p.5-16Chapter 5.1.4 --- Surface morphology and roughness --- p.5-22Chapter 5.1.5 --- Conclusion --- p.5-29Chapter 5.2 --- Effect of substrate temperature --- p.5-29Chapter 5.2.1 --- Electrical and optical properties --- p.5-29Chapter 5.2.2 --- Structure and orientation --- p.5-44Chapter 5.2.3 --- Surface morphology and roughness --- p.5-49Chapter 5.2.4 --- Conclusion --- p.5-54Chapter 5.3 --- Effect of vacuum annealing --- p.5-54Chapter 5.3.1 --- Electrical and optical properties --- p.5-54Chapter 5.3.2 --- Conclusion --- p.5-59Chapter 5.4 --- Effect of different substrates --- p.5-59Chapter 5.4.1 --- Comparison of heteroepitaxial and polycrystalline ITO films --- p.5-60Chapter 5.4.2 --- Conclusion --- p.5-63Chapter 5.5 --- Effect of film thickness --- p.5-64Chapter 5.5.1 --- Film thickness calibration --- p.5-64Chapter 5.5.2 --- Electrical properties --- p.5-64Chapter 5.5.3 --- Conclusion --- p.5-67Chapter 5.6 --- Effect of deposition pressure --- p.5-68Chapter 5.6.1 --- Deposition rate --- p.5-68Chapter 5.6.2 --- Electrical properties --- p.5-70Chapter 5.6.3 --- Conclusion --- p.5-70Chapter 5.7 --- Effect of target pre-conditioning --- p.5-72Chapter 5.8 --- Conclusion --- p.5-72References --- p.5-74Chapter Chapter 6 --- Further works --- p.6-1Appendix