The deposition and characterization of tin oxide based heterojunction structures.

by Man Wah-Kit.Thesis (M.Phil.)--Chinese University of Hong Kong, 1996.Includes bibliographical references (leaves 177-180).LIST OF FIGURESLIST OF TABLESabstract --- p.1Chapter 1. --- introduction --- p.3Chapter 2. --- fabrication processChapter 2-1 --- INTRODUCTION --- p.7Chapter 2-2 --- PROCESS DEVELOPMENT --- p.8Chapter 2-3 --- FABRICATION PROCEDURES FOR TIN FILMS --- p.10Chapter 2-4 --- FABRICATION PROCEDURES FOR TIN OXIDE FILMS --- p.14Chapter 2-5 --- FABRICATION THEORY --- p.21Chapter 2-6 --- OXYGEN ION IMPLANTATION OF TIN FILMS --- p.24Chapter 3. --- structural characterizationChapter 3-1 --- INTRODUCTION --- p.30Chapter 3-2 --- MICROSTRUCTUREChapter 3-2-1 --- SOME RELATED THEORIES OF GRAIN GROWTHChapter (1) --- Classical Theory of Grain Growth --- p.30Chapter (2) --- Hillock Growth --- p.31Chapter (3) --- Dislocation Creep Theory --- p.33Chapter (4) --- Biaxial Stress in Thin Films --- p.35Chapter (5) --- Surface Cluster Growth --- p.37Chapter 3-3 --- EXPERIMENTATION AND RESULTSChapter 3-3-1 --- MICROSTRUCTURAL ANALYSIS UNDER OPTICAL MICROSCOPE --- p.39Chapter 3-3-2 --- THE STRESS AND HILLOCK HEIGHT ANALYSIS OF TIN OXIDE FILMS --- p.48Chapter 3-3-3 --- MICROSTRUCTURAL ANALYSIS BY MEANS OF ATOMIC FORCE MICROSCOPE (AFM) --- p.52Chapter 3-3-4 --- MICROSTRUCTURAL ANALYSIS BY X-RAY DIFFRACTION --- p.69Chapter 3-3-5 --- SURFACE ANALYSIS BY MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPYChapter (1) --- Introduction --- p.73Chapter (2) --- Basic Theory --- p.73Chapter (3) --- Experimentation And Results --- p.75Chapter 3-3-6 --- SURFACE STUDY OF ION IMPLANTED TIN OXIDE FILMSChapter (1) --- Experimental Results --- p.82Chapter 3-4 --- DISCUSSIONChapter 3-4-1 --- QUALITATIVE ANALYSIS OF MICROSTRUCTURE WITH THE OPTICAL MICROSCOPE --- p.88Chapter 3-4-2 --- QUALITATIVE ANALYSIS OF MICROSTRUCTURE WITH SEM AND AFMChapter (1) --- Grain Growth of Tin Oxide Films --- p.89Chapter (2) --- Dependence of Grain Size on Deposition Rate --- p.91Chapter (3) --- Dependence of Grain Size on Film Thickness --- p.92Chapter (4) --- Dependence of Grain Size on Substrate Temperature --- p.92Chapter (5) --- Origin of Hillock Growth of Tin Oxide Films --- p.93Chapter 3-4-3 --- FILM COMPOSITIONAL ANALYSIS WITH X-RAY DIFFRACTION --- p.95Chapter 3-4-4 --- SURFACE ANALYSIS WITH X-RAY PHOTOELECTRON SPECTROSCOPY …… --- p.95Chapter 3-4-5 --- SURFACE ANALYSIS OF OXYGEN IMPLANTED TIN FILMS --- p.96Chapter 4. --- OPTICAL CHARACTERIZATIONChapter 4-1 --- INTRODUCTION --- p.98Chapter 4-2 --- THEORYChapter (1) --- Free Electron Model --- p.99Chapter (2) --- Effect of Film Thickness --- p.100Chapter (3) --- Effect of Oxygen Contents --- p.101Chapter (4) --- Electron-Lattice Interaction and Bandgap Studies --- p.102Chapter 4-3 --- EXPERIMENTATION AND RESULTS --- p.105Chapter 4-4 --- DISCUSSIONChapter 4-4-1 --- BANDGAP STUDIES FOR TIN OXIDE FILMS WITH DIFFERENT DEPOSITION CONDITIONSChapter (1) --- Variation of Film Thickness --- p.122Chapter (2) --- Film Appearance --- p.123Chapter (3) --- Variation of Substrate Temperature --- p.123Chapter (4) --- Variation of Oxidation Conditions --- p.123Chapter 5. --- ELECTRICAL CHARACTERIZATIONChapter 5-1 --- INTRODUCTION --- p.126Chapter 5-2 --- RELATED THEORYChapter 5-2-1 --- CURRENT-VOLTAGE (I-V) CHARACTERISTICS --- p.127Chapter 5-2-2 --- CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS --- p.131Chapter 5-2-3 --- RELATION OF ELECTRICAL TO STRUCTURAL PROPERTIESChapter (A) --- Effects of Deposition Conditions --- p.133Chapter (B) --- Effects of Grain Boundaries --- p.133Chapter (C) --- Effects of Ionic Impurities --- p.134Chapter (D) --- Effects of The Interface Properties --- p.134Chapter 5-2-4 --- MEASURING TECHNIQUESChapter (A) --- I-V Measurment of Tin Oxide on a Silicon Substrate --- p.136Chapter (B) --- C-V Measurement of Tin Oxide Films on Silicon Substrates --- p.137Chapter (C) --- Electrical Measurement of Tin Oxide Films on a Quartz Substrate --- p.137Chapter 5-3 --- EXPERIMENTATION --- p.138Chapter 5-4 --- RESULTS --- p.141Chapter 5-5 --- DISCUSSIONChapter 5-5-1 --- Analysis of the Conduction Mechanism for Sn02/Si n-p Heterojunctions --- p.161Chapter 5-5-2 --- Analysis of the Conduction Mechanism for Sn02/Si n-n Heterojunctions --- p.162Chapter 5-5-3 --- Effect on the Conduction Mechanisms of Film Thickness --- p.164Chapter 5-5-4 --- Effect on the Conduction Mechanisms of Oxidation Time --- p.166Chapter 5-5-5 --- Interfacial Properties of SnOx/Si Heterojunctions --- p.166Chapter 5-5-6 --- Electrical Properties of SnOx Films on QuartzChapter (1) --- Dependence of Film Conductivity on Measuring Temperatures --- p.168Chapter (2) --- Dependence of Film Conductivity on Oxidation Time --- p.168Chapter (3) --- Dependence of Film Conductivity on Oxidation Temperature --- p.169Chapter (4) --- Invariance of Film Conductivity at Some Certain Measuring Temperatures --- p.170Chapter (5) --- Activation Energy of Sn02 Films on Quartz --- p.170Chapter 6. --- CONCLUSIONS --- p.172Chapter 7. --- FUTURE WORKS --- p.175Chapter 8. --- REFERENCES --- p.177Chapter 9. --- APPENDICESChapter 9-1 --- APPENDIX A List of photos --- p.181Chapter 9-2 --- APPENDIX B (1) ED AX results for some selected regions on samples with hillocks --- p.182Chapter (2) --- Relations between mean surface roughness and oxidation conditions --- p.185Chapter (3) --- XPS original data and typical XPS spectra for vacuum- evaporated SnO2 thin film --- p.186Chapter 9-3 --- "APPENDIX C Variations of optical parameters, refractive index n and extinction coefficient k in visible region with different oxidation conditions" --- p.189Chapter 9-4 --- APPENDIX D Electrical results for Sn02/Si heterojunction s --- p.191Chapter 9-5 --- APPENDIX E Calculations of band diagram for Sn02/Si heterojunctions --- p.194Chapter 9-6 --- APPENDIX F Resistivity versus impurity concentration for silicon at 300K --- p.19