A study of the device characteristics of a novel body-contact SOI structure.

Lau Wai Kwok.Thesis (M.Phil.)--Chinese University of Hong Kong, 1996.Includes bibliographical references.Acknowledgement --- p.ivAbstract --- p.vChapter Chapter 1 --- Introduction --- p.1-1Chapter 1.1 --- Perspective --- p.1-1Chapter 1.2 --- MEDICI - The Simulation Package --- p.1 -2Chapter 1.3 --- Overview --- p.1-3Chapter Chapter 2 --- The Emergence of SOI Devices --- p.2-1Chapter 2.1 --- Introduction --- p.2-1Chapter 2.2 --- Advantages of SOI Devices --- p.2-1Chapter 2.2.1 --- Reliability Improvement --- p.2-2Chapter 2.2.2 --- Total Isolation --- p.2-3Chapter 2.2.3 --- Improved Junction Structure --- p.2-4Chapter 2.2.4 --- Integrated Device Structure --- p.2-5Chapter 2.3 --- Categories of SOI Devices --- p.2-6Chapter 2.3.1 --- Thick Film SOI Devices --- p.2-7Chapter 2.3.2 --- Thin Film SOI Devices --- p.2-8Chapter 2.3.3 --- Medium Film SOI Devices --- p.2-8Chapter 2.4 --- Drawbacks of SOI Devices --- p.2-9Chapter 2.4.1 --- Floating Body Effects --- p.2-9Chapter 2.4.2 --- Parasitic Bipolar Effects --- p.2-11Chapter 2.4.3 --- Cost --- p.2-15Chapter 2.5 --- Manufacturing Methods --- p.2-16Chapter 2.5.1 --- Epitaxy-Based Method --- p.2-16Chapter 2.5.2 --- Recrystallization-Based Method --- p.2-18Chapter 2.5.3 --- Wafer Bonding Based Method --- p.2-19Chapter 2.5.4 --- Oxidation Based Method --- p.2-20Chapter 2.5.5 --- Implantation Based Method --- p.2-22Chapter 2.6 --- Future Trend --- p.2-22Chapter 2.7 --- The Quest for Silicon-On-Nitride Structure --- p.2-23Chapter Chapter 3 --- Description of Body-Contact SOI Structure --- p.3-1Chapter 3.1 --- Introduction --- p.3-1Chapter 3.2 --- Current Status of Body-Contact SOI Structure --- p.3-1Chapter 3.3 --- The Body-Contact SOI Structure to be studied --- p.3-4Chapter 3.4 --- Impact on Device Fabrication --- p.3-7Chapter 3.4.1 --- Fabrication of Conventional Bulk CMOS --- p.3-7Chapter 3.4.2 --- Fabrication of Conventional SOI CMOS --- p.3-8Chapter 3.4.3 --- Fabrication of BC SOI CMOS --- p.3-10Chapter Chapter 4 --- Device Simulations --- p.4-1Chapter 4.1 --- Introduction --- p.4-1Chapter 4.2 --- MEDICI --- p.4-1Chapter 4.2.1 --- Basic Equations --- p.4-2Chapter 4.2.2 --- Solution Methods --- p.4-3Chapter 4.2.3 --- Initial Guess --- p.4-6Chapter 4.2.4 --- Grid Allocations --- p.4-7Chapter 4.2.5 --- Source File --- p.4-8Chapter 4.3 --- Structures for Simulations --- p.4-9Chapter 4.3.1 --- l.2μm NMOS Bulk (LDD) --- p.4-9Chapter 4.3.2 --- 1.2μm SOI(O) NMOS 1000/3500 NBC --- p.4-11Chapter 4.3.3 --- 1.2μm SOI(N) NMOS 1000/3500 NBC --- p.4-12Chapter 4.3.4 --- 1.2μm SOI(O) NMOS 1000/3500 WBC --- p.4-13Chapter 4.3.5 --- 1.2μm SOI(N) NMOS 1000/3500 WBC --- p.4-14Chapter 4.4 --- Summary --- p.4-14Chapter Chapter 5 --- Simulation Results --- p.5-1Chapter 5.1 --- Introduction --- p.5-1Chapter 5.2 --- Comparisons of Different Structures --- p.5-1Chapter 5.2.1 --- Impurity Profiles of Structures --- p.5-2Chapter 5.2.2 --- Body Effect --- p.5-10Chapter 5.2.3 --- Breakdown Voltage and Transistor Current Driving --- p.5-16Chapter 5.2.4 --- Transconductance and Mobility --- p.5-20Chapter 5.2.5 --- Subthreshold Swing --- p.5-23Chapter 5.3 --- Dependence on Key Structure Parameters --- p.5-29Chapter 5.3.1 --- Dependence on Insulator Thickness --- p.5-29Chapter 5.3.2 --- Dependence on Silicon Overlayer Thickness --- p.5-34Chapter 5.3.3 --- Dependence on Size of Body-Contact --- p.5-37Chapter 5.4 --- Summary --- p.5-40Chapter Chapter 6 --- Reduction of Latch-up Susceptibility --- p.6-1Chapter 6.1 --- Introduction --- p.6-1Chapter 6.2 --- Construction of a p-channel MOS Transistor --- p.6-2Chapter 6.2.1 --- Threshold Voltage and Body Effect --- p.6-3Chapter 6.2.2 --- I-V Characteristics --- p.6-3Chapter 6.2.3 --- Transconductance --- p.6-5Chapter 6.2.4 --- Subthreshold Swing --- p.6-5Chapter 6.3 --- Mechanism of Latch-up in CMOS --- p.6-6Chapter 6.4 --- Construction of a CMOS Invertor for Simulation --- p.6-10Chapter 6.5 --- Latch-up Susceptibility Dependence --- p.6-16Chapter 6.5.1 --- Dependence on Insulator Thickness --- p.6-16Chapter 6.5.2 --- Dependence on N-well Depth --- p.6-19Chapter 6.5.3 --- Dependence on Transistor Separation --- p.6-22Chapter 6.5.4 --- Dependence on Size of Body-Contact --- p.6-25Chapter 6.6 --- Summary --- p.6-28Chapter Chapter 7 --- Conclusions --- p.7-1Chapter 7.1 --- Summary --- p.7-1Chapter 7.2 --- Recommendation --- p.7-3ReferenceAppendix