Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Institute of Physics (http://www.aip.org/).Hot electron luminescence experiments are performed on ZnS alternating-current thin-film electroluminescent (ACTFEL) devices in order to determine the extent to which the electron distribution is heated. The luminescence spectrum is found to be broad and essentially featureless up to a high energy cutoff of approximately 3.7 eV, which is determined by optical absorption within the ZnS. This result indicates that under normal operating conditions in a ZnS ACTFEL device, a significant fraction of the electrons transported across the phosphor possess energies equal to or in excess of the ZnS band gap
We present a novel technique for room temperature, solution-based fabrication of alternating current...
Available from British Library Lending Division - LD:D56267/85 / BLDSC - British Library Document Su...
The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered ...
After the establishment of a reasonably detailed understanding of thin film electroluminescence (TFE...
Thin films of ZnS: Mn prepared by RF-ion plating exhibited more bright electroluminescence than thos...
Optical and electrical characterization of the ZnS self-organized quantum dots (QDs) embedded in ZnS...
The control of electroluminescence by an UV or X irradiation is called photo-electroluminescence. Th...
SIGLEAvailable from British Library Document Supply Centre- DSC:D80832 / BLDSC - British Library Doc...
Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Inst...
The mechanism of carrier heating in ZnS-based electroluminescence devices is discussed. We show that...
The thermoluminescence (TL) of ZnS nanoparticles is reported. The TL intensity increases as the part...
Abstract. The transient acceleration process of electrons in ZnS-type thin film electroluminescent d...
In the later part of the twentieth century, classic cathode ray tubes (CRTs) are replaced by flat pa...
Electroluminescence (EL) on ZnS was studied in aqueous olutions containing various redox species. Fo...
Fig. S. The initial part of a decay curve; (a) ZnS:Cu,A1, (b) ZnS:Ag,C 1, and (c) ZnS:Ag,Ga,C1. The ...
We present a novel technique for room temperature, solution-based fabrication of alternating current...
Available from British Library Lending Division - LD:D56267/85 / BLDSC - British Library Document Su...
The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered ...
After the establishment of a reasonably detailed understanding of thin film electroluminescence (TFE...
Thin films of ZnS: Mn prepared by RF-ion plating exhibited more bright electroluminescence than thos...
Optical and electrical characterization of the ZnS self-organized quantum dots (QDs) embedded in ZnS...
The control of electroluminescence by an UV or X irradiation is called photo-electroluminescence. Th...
SIGLEAvailable from British Library Document Supply Centre- DSC:D80832 / BLDSC - British Library Doc...
Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Inst...
The mechanism of carrier heating in ZnS-based electroluminescence devices is discussed. We show that...
The thermoluminescence (TL) of ZnS nanoparticles is reported. The TL intensity increases as the part...
Abstract. The transient acceleration process of electrons in ZnS-type thin film electroluminescent d...
In the later part of the twentieth century, classic cathode ray tubes (CRTs) are replaced by flat pa...
Electroluminescence (EL) on ZnS was studied in aqueous olutions containing various redox species. Fo...
Fig. S. The initial part of a decay curve; (a) ZnS:Cu,A1, (b) ZnS:Ag,C 1, and (c) ZnS:Ag,Ga,C1. The ...
We present a novel technique for room temperature, solution-based fabrication of alternating current...
Available from British Library Lending Division - LD:D56267/85 / BLDSC - British Library Document Su...
The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered ...