A theoretical semi-classical method to calculate the modulated field profile in a semiconductor is presented. The behavior of quasi-Fermi levels and chemical potentials for the majority and minority carriers is investigated. Systematic studies of the non-thermodynamic equilibrium electric potential profile as a function of the modulation light intensity are performed
Author Institution: Crystal Branch, Metallurgy Division, Naval Research LaboratoryThe optical proper...
The investigation is concerned with semiconductors with a narrow prohibited zone A2IV1B2VI1, laminar...
This thesis is made available online and is protected by original copyright. Please scroll down to v...
A theoretical model for the steady-state photoconductance of an abrupt p-n junction semiconductor di...
An observable e.m.f. exists in a semiconductor when a non-equilibrium carrier concentration is prese...
A novel electrode geometry and contacting procedure has allowed measurement of the quasi-Fermi level...
The slightly alloyed and disordered semiconductors were investigated as well as the surface layers o...
Substances are usually classified according to their electrical conductivity as conductors, insulato...
This work deals with fundamental properties of semiconductors materials and methods of their measuri...
Copyright © 2014 V. V. Filippov and S. E. Luzyanin. This is an open access article distributed under...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
A nonequilibrium Green's functions approach is presented for the consistent computation of semicondu...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
The investigation of non-polar III-V semiconductor surfaces by cross-section scanning tunneling micr...
In this work, the influence of the microwave field on the Fermi quasi level in different semiconduct...
Author Institution: Crystal Branch, Metallurgy Division, Naval Research LaboratoryThe optical proper...
The investigation is concerned with semiconductors with a narrow prohibited zone A2IV1B2VI1, laminar...
This thesis is made available online and is protected by original copyright. Please scroll down to v...
A theoretical model for the steady-state photoconductance of an abrupt p-n junction semiconductor di...
An observable e.m.f. exists in a semiconductor when a non-equilibrium carrier concentration is prese...
A novel electrode geometry and contacting procedure has allowed measurement of the quasi-Fermi level...
The slightly alloyed and disordered semiconductors were investigated as well as the surface layers o...
Substances are usually classified according to their electrical conductivity as conductors, insulato...
This work deals with fundamental properties of semiconductors materials and methods of their measuri...
Copyright © 2014 V. V. Filippov and S. E. Luzyanin. This is an open access article distributed under...
Electrical properties of semiconductor materials depend on their defect structure. Point defects, im...
A nonequilibrium Green's functions approach is presented for the consistent computation of semicondu...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
The investigation of non-polar III-V semiconductor surfaces by cross-section scanning tunneling micr...
In this work, the influence of the microwave field on the Fermi quasi level in different semiconduct...
Author Institution: Crystal Branch, Metallurgy Division, Naval Research LaboratoryThe optical proper...
The investigation is concerned with semiconductors with a narrow prohibited zone A2IV1B2VI1, laminar...
This thesis is made available online and is protected by original copyright. Please scroll down to v...