Simulation of SiliconCarbide PN Junction for breakdown voltage with guard rings and without guard rings using Synopsys Sentaurus TCAD

Includes bibliographical references (leaves 73-78)Today, the need of speed and durability is very much required, which goes the same in the semiconductor industry. Silicon carbide based p-n Junction diodes have a high power performance with superior RF response performance with high saturation velocity of electrons, high break-down field and high thermal combination, In this project, SiC based p-n junction diode structure and vi1iual fabrication using Synopsys Sentaurus TCAD with different tool such as S-device and S-process TCAD has the capability to develop and simulate the fabrication and electrical outcome of semiconductor devices. It takes mask layout, process steps with parameters and electrical outcome of semiconductor devices. It then incorporates the data to produce simulated data (i.e., device structure, I-V curves). From the simulation expe1ience with TCAD, it is understood that the software has many "powerful" options that can lead to deeper analysis. The objective of this project is to study the breakdown voltage of SiC p-n junction diode with and without guard ring. Junction diode with and without guard ring