Simulation of Silicon Carbide Schottky diode (SiC)

Includes bibliographical references (leaves 70-74)The specific Schottky diode that is designed and simulated in this project is an Silicon Carbide (SiC) Schottky diode. Besides actual experiments in the research field, Schottky di{)de can also be simulated using special computer software. In this project, computer software, Technology Computer-Aided Design (TCAD), a product of Synopsys??? is used to simulate a particular type of Schottky diode. The software has the capability to develop and simulate the fabrication and electrical outcome of the semiconductor devices. In terms of simulation, TCAD has template setup with various windows. It takes design layout, process steps with parameters and electrical analysis instructions in separate windows. It then incorporates the data to produce simulated data (i.e. device structure, IV curves). From the simulation experience with TCAD, it is understood that the software has many "powerful" options that can lead to deeper analysis. In this project a general electrical characteristic of an SiC Schottky diode is achieved