Analytical solution of the diode ideality factor of a p-n junction device using Lamber W-function model

Includes bibliographical references (leaves 62-64)This paper presents a simple analytical expression for the current flow in a diode driven by a voltage source through a series resistance. The proposed solution is based on the Lambert W-function. The new expression leads to an efficient method for extracting series resistance from measured current-voltage data. Experimental results are presented which validate the proposed solution and extraction method. The ideality factor determines the quality of the diode affected by the process induced defects. Ideally, the ideality factor shows a range of 1 - 2 for silicon. The series resistance (Rs) of p-n junction diode is an important parameter for the performance of p-n junction based diode. In order to create a reliable model of a p-n junction, one needs a diode model with accurate diode parameter including the series resistance. The effect of series resistance has been extracted from above I-V characteristics